A High Performance and Fully Differential V-Band CMOS Transmitter

Hamidian, Amin; Malignaggi, Andrea; Shu, Ruiwen; Kamal, Ali M.; Boeck, Georg

doi:10.1109/lmwc.2015.2440778

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Dual‐mode Lo‐distribution Circuitry2

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Cited by 4 publications

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“…This is mainly due to the direct contribution of the phase noise to the error‐vector‐magnitude of the signal. The achieved phase noise of the on‐chip VCO in this work is ≈−90 dBc/Hz at 1 MHz [7]. The chip micrograph and block diagram of the complete TRx are shown in Figs.…”

Section: Dual‐mode Lo‐distribution Circuitrymentioning

confidence: 99%

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Fully differential switching topology for mm‐wave dual‐mode LO‐distribution circuitry

2016

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A novel switching circuitry for fully differential millimetre-wave applications is presented. The structure of the proposed switching architecture includes 90 nm CMOS transistors and a distributed-active-transformer. To minimise the chip size, an innovative topology based on lumped components is investigated, resulting a total size of <0.025 mm 2. The performance of the designed switch is validated within a dual-mode local oscillatordistribution circuitry of a V-band transceiver.

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Section: Dual‐mode Lo‐distribution Circuitrymentioning

confidence: 99%

“…4 c ). The internal VCO (characterised separately [7]) delivers around −10 dBm output power ( P OUT ) at each channel (IEEE802.11 ad) [7]. The external LO is also fixed to −10 dBm at the input pads.…”

Section: Dual‐mode Lo‐distribution Circuitrymentioning

confidence: 99%