A high-performance capacitorless 1T-DRAM based on Z-shaped electron-hole bilayer TFET and SiGe memory window
Hu Liu,
Xiaoyu Zhou,
Yubin Li
et al.
Abstract:In this paper, a novel capacitorless dynamic random access memory (Z-EHBTFET 1T-DRAM) is designed based on a Z-shaped electron-hole bilayer tunnel field-effect transistor and a SiGe memory window, and its storage performance is systematically analyzed and studied in detail through numerical simulation. A large number of electrons can be induced in the inverted L-shaped channel of Z-EHBTFET 1T-DRAM using gate 1 to create an electron-hole bilayer together with the source region, which increases the line tunnelin… Show more
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