A high performance graphene/few-layer InSe photo-detector

Chen, Zhe‐Sheng; Biscaras, Johan; Shukla, Abhay

doi:10.1039/c5nr00400d

Cited by 154 publications

(165 citation statements)

References 35 publications

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“…This electron transfer is not attributed to a strong coupling between MoS 2 and graphene (since we consider a weak van der Waals interaction for this structure), but rather to a standard hopping from an electron in MoS 2 conduction band to an unoccupied state at the same energy in graphene4344.…”

Section: Resultsmentioning

confidence: 99%

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Pierucci¹,

Henck²,

Naylor³

et al. 2016

Sci Rep

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Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design.

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Section: Resultsmentioning

confidence: 99%

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Pierucci¹,

Henck²,

Naylor³

et al. 2016

Sci Rep

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“…19,28,31 However, the performance of InSe-based transistors at ambient conditions 16 or under external fields 32 was found to be unsatisfying due to the degradation of their performance. 33,34 Its lone-pair states of Se atoms at the top of the valence band of InSe induce high sensitivity to external adsorbates. 35 The situation was improved for the passivated InSe sheet, particularly, the electron mobility of the boron-nitride/graphene passivated InSe sheet was found to exceed 10 3 cm 2 V −1 s −1 at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe

et al. 2018

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Layered indium selenide (InSe), a new two-dimensional (2D) material with a hexagonal structure and semiconducting characteristic, is gaining increasing attention owing to its intriguing electronic properties.Here, by using first-principles calculations, we reveal that perfect InSe possesses a high chemical stability against oxidation, superior to MoS2. However, the presence of intrinsic Se vacancy (VSe) and light illumination can markedly affect the surface activity. In particular, the excess electrons associated with the exposed In atoms at the VSe site under illumination are able to remarkably reduce the dissociation barrier of O2 to ~0.2 eV. Moreover, at ambient conditions, the splitting of O2 enables the formation of substitutional (apical) oxygen atomic species, which further cause the trapping and subsequent rapid splitting of H2O molecules and ultimately the formation of hydroxyl groups. Our findings uncover the causes and underlying mechanisms of InSe surface degradation via the defect-photo promoted oxidations.Such results will be beneficial in developing strategies for the storage of InSe material and its applications for surface passivation with boron nitride, graphene or In-based oxide layers.

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“…properties of each material in a device, which maintains a 2D character and can be ideally used in electronics and optoelectronics [1][2][3][4][5][6][7][8][9][10][11]. In comparison to a 'bulk' semiconductor-heterostructure with layer thickness of the order of the light wavelength or bigger, the multiple interfaces and the sub-wavelength thickness of each layer decisively influence the interaction of light with heterostructures, and the device performance.…”

mentioning

confidence: 99%

Optimal light harvesting in 2D semiconductor heterostructures

2017

Self Cite

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Optoelectronics with two dimensional (2D) heterostructures combining transition metal dichalcogenides (TMDCs) and other semiconductors in hybrid stacks is potentially promising because of the possibility of fabricating devices with high efficiency and new properties. Ultrafast charge transfer across the interface and long lifetime of carriers makes the vertical geometry attractive with respect to traditional bulk heterostructures. In such ultrathin structures, the multiple boundaries and the thickness of each material play a key role in the interaction of light with the device and can strongly influence the device performance. In this article we study light harvesting in 2D InSe/MoS 2 semiconductor heterostructures by measuring Raman enhancement or attenuation as a function of layer thicknesses. Measurements are precisely reproduced by the calculation of the light emission, and the field distribution inside the heterostructure. Optimizing layer thickness and material interfaces has a significant effect on the light distribution in such 2D heterostructures with layer thickness in the region of a few tens of nanometers, providing a means to enhance the performance of emerging 2D semiconductor-heterostructure optoelectronics.

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A high performance graphene/few-layer InSe photo-detector

Cited by 154 publications

References 35 publications

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe

Optimal light harvesting in 2D semiconductor heterostructures

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