A high performance high voltage lateral PNP structure

Abstract

An improved high voltage lateral PNP structure is described.Devices built with the s t r u c t u r e have HFE and Early voltage as good as quality discrete devices a n d maintain fT greater t h a n 1.5 MHz a t 350V. The process i s simpler than those previously described for production of complementary vertical devices. Experimental results f o r a range of profiles and geometries are presented.