A high-performance logic inverter achieved using mixed-dimensional WSe2/n+-Si and MoS2/p+-Si junction field-effect transistors

Kim, Yoonsok; Kim, Taeyoung; Jeong, Wonchae; Jeong, Mun Seok; Kim, Eun Kyu

doi:10.1039/d3tc02837b

Cited by 1 publication

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“…Therefore, R c calculated from the YFM can still be used to compare the three FETs. Particularly, we further compared our results to other reports that focus on reducing the SBH and R c of WSe 2 -based devices, as shown in Table S1. ,,− Our strategy achieves an ultralow SBH and comparable R c compared to other contact methods, paving a path for the future fabrication of WSe 2 -based logic devices.…”

Section: Resultsmentioning

confidence: 82%

High-Performance Contact-Doped WSe₂ Transistors Using TaSe₂ Electrodes

Liu,

Yue,

Sheng

et al. 2024

ACS Appl. Mater. Interfaces

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transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe 2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe 2 flakes were stacked on doped WSe 2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe 2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe 2 FETs. The doped WSe 2 /TaSe 2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ•μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.

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Section: Resultsmentioning

confidence: 82%

High-Performance Contact-Doped WSe₂ Transistors Using TaSe₂ Electrodes

Liu,

Yue,

Sheng

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

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A high-performance logic inverter achieved using mixed-dimensional WSe₂/n⁺-Si and MoS₂/p⁺-Si junction field-effect transistors

Abstract: A new conceptual logic inverter achieved by combining MoS2 and WSe2 junction field-effect transistors can be applied to high-frequency electronics.

Cited by 1 publication

References 39 publications

High-Performance Contact-Doped WSe₂ Transistors Using TaSe₂ Electrodes

High-Performance Contact-Doped WSe₂ Transistors Using TaSe₂ Electrodes

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A high-performance logic inverter achieved using mixed-dimensional WSe2/n+-Si and MoS2/p+-Si junction field-effect transistors

Abstract: A new conceptual logic inverter achieved by combining MoS2 and WSe2 junction field-effect transistors can be applied to high-frequency electronics.

Cited by 1 publication

References 39 publications

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes

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A high-performance logic inverter achieved using mixed-dimensional WSe₂/n⁺-Si and MoS₂/p⁺-Si junction field-effect transistors

High-Performance Contact-Doped WSe₂ Transistors Using TaSe₂ Electrodes

High-Performance Contact-Doped WSe₂ Transistors Using TaSe₂ Electrodes