A High-Performance n-i-p SiCN Homojunction for Low-Cost and High-Temperature Ultraviolet Detecting Applications

Juang, Feng-Renn; Fang, Yean–Kuen; Chiang, Yen-Ting; Chou, Tse-Heng; Lin, Chih-Lung

doi:10.1109/jsen.2010.2052799

Cited by 16 publications

(6 citation statements)

References 27 publications

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“…The current ratio for 254 nm UV light was about 6.5 at RT and 2.3 at 200 °C. With effective doping both in p -type and n -type, the n-i-p anb n-p SiCN homojunction UV detectors on Si substrate by using the same method also demonstrated good performances [143]. The photo to dark current ratios of the homojunction under −5 V, with and without irradiation of a 254 nm UV light were 3,180 and 135.65, respectively, at RT and 200 °C.…”

Section: Semiconductor Thin-film Uv Photodetectormentioning

confidence: 99%

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Sang

Liao

Sumiya

2013

Sensors

741

435

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Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

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Section: Semiconductor Thin-film Uv Photodetectormentioning

confidence: 99%

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Sang

Liao

Sumiya

2013

Sensors

741

435

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“…This novel metallic composite material might be one of the greatest possibilities for future metal-based nano-structural device development, but it requires more research into nano-grating structure design and modeling for MSM-PDs as this contains a volumetric fraction of SiC. For the development of high current/temperature-driven modern optoelectronic devices, SiC and SiC-based materials are found to be highly recommended in the literature [79][80][81][82][83]. This new type of However, putting this double layer nano-grating structure device into practice will be difficult owing to the disadvantages of employing silver as a top metal layer for any multilayer structure due to its rapid oxidation and surface deterioration.…”

Section: Advance States Of Simulated Results and Discussionmentioning

confidence: 99%

Nano-grating Assisted Light Absorption Enhancement for MSM-PDs Performance Improvement: An Updated Review

et al. 2021

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The primary focus of this review article mainly emphasizes the light absorption enhancement for various nanostructured gratings assisted metal-semiconductor-metal photodetectors (MSM-PDs) that are so far proposed and developed for the improvement of light capturing performance. The MSM-PDs are considered as one of the key elements in the optical and high-speed communication systems for applications such as faster optical fiber communication systems, sensor networks, high-speed chip-to-chip interconnects, and high-speed sampling. The light absorption enhancement makes the MSM-PDs an ideal candidate due to their excellent performances in detection, especially in satisfying the high-speed or high-performance device requirements. The nano-grating assisted MSM-PDs are preordained to be decorous for many emerging and existing communication device applications. There have been a significant number of research works conducted on the implementation of nano-gratings, and still, more researches are ongoing to raise the performance of MSM-PDs particularly, in terms of enhancing the light absorption potentialities. This review article aims to provide the latest update on the exertion of nano-grating structures suitable for further developments in the light absorption enhancement of the MSM-PDs.

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“…Compared to the conventional DLC deposition methods, such as ion deposition, sputtering, pulsed laser deposition, microwave plasma-enhanced or electron cyclotron resonance 1530-437X/$26.00 © 2011 IEEE chemical vapor deposition, RTCVD would be more suitable for mass production because RTCVD can effectively grow thin film under the suitable temperature within a short time, thus lowering the cost with low thermal budget [8].…”

Section: A Film Preparationmentioning

confidence: 99%

Preparation and Characterizations of the High UV Sensitivity Porous Diamond-Like Carbon Thin Film MSM Photodiodes

Juang

Fang

2012

IEEE Sensors J.

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For the first time, we use a porous diamond-like carbon (DLC) film formed on a porous Si substrate to promote its ultraviolet (UV) quantum efficiency. With the porous DLC films, we developed metal-semiconductor-metal (MSM) photodiodes for UV detecting applications. The morphology and structure of the porous DLC film were analyzed with SEM photos for both top and cross section views. Besides, we examined the responses of the diodes to UV light by measurement of the photo/dark current ratio with and without the irradiation of a 366 nm UV light. Experiments show the current ratio and quantum efficiency are respectively promoted 570 and 76 under 15 V bias by the porous structure. Index Terms-DLC, MSM, porous structure, quantum efficiency, UV light.

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A High-Performance n-i-p SiCN Homojunction for Low-Cost and High-Temperature Ultraviolet Detecting Applications

Cited by 16 publications

References 27 publications

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Nano-grating Assisted Light Absorption Enhancement for MSM-PDs Performance Improvement: An Updated Review

Preparation and Characterizations of the High UV Sensitivity Porous Diamond-Like Carbon Thin Film MSM Photodiodes

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