A high-performance NiO/TiO₂ UV photodetector: the influence of the NiO layer position

Abstract

P-n junction has been widely used in the construction of high-performance devices in TiO2 ultraviolet photoelectric detectors, especially NiO/TiO2 heterostructure. In this work, two devices with different structures were constructed...

The transparent photovoltaic NiO/TiO2 orderly nanoarray pn junction via synergism of AgInS2 quantum dots and Ti3+ self-doping

“…This indicates the presence of Ni in the Ni 2+ /Ni 3+ mixed state, and is also an important factor for inducing a holerelated carrier. [11][12][13][14] Moreover, the peaks at 367.55 and 373.56 eV are from the Ag + ions (Fig. 2(l)), the peaks at 444.37 and 451.90 eV are from the In 3+ ions (Fig.…”

“…Herein, the NiO-based ph̲otovoltaic device has been reported as a significant application. 11 In addition to the wide band gap guaranteeing good daylight and abundant nickel reserves making it low cost, the adjustable Ni 2+ /Ni 3+ state can efficiently induce hole-related carriers to advance the photovoltaic conversion efficiency upper limit. 12,13 Liu et al fabricated the Ga 2 O 3 /NiO/SiC triple pn junction to achieve a remarkable ultraviolet photoelectric response.…”

Polypyrrole Film Deposited-TiO2 Nanorod Arrays for High Performance Ultraviolet Photodetectors

“…The Schottky heterojunction can be constructed using a recombination of metal nanoparticles to provide it with excellent photoelectric response performance. So far, tremendous efforts have been made to design high-performance TiO 2 -based UV photodetectors by constructing p-n junctions, Schottky junctions, and heterojunctions for their fast photo-excited electron-hole pair separation [12][13][14][15][16]. Yang et al [15] fabricated all-solid-state NiO/TiO 2 heterojunctions with the NiO layer above or below TiO 2 nanoarrays, and the fabricated devices demonstrated high detection sensitivity, fast photoresponse time, and self-powered performance.…”

“…So far, tremendous efforts have been made to design high-performance TiO 2 -based UV photodetectors by constructing p-n junctions, Schottky junctions, and heterojunctions for their fast photo-excited electron-hole pair separation [12][13][14][15][16]. Yang et al [15] fabricated all-solid-state NiO/TiO 2 heterojunctions with the NiO layer above or below TiO 2 nanoarrays, and the fabricated devices demonstrated high detection sensitivity, fast photoresponse time, and self-powered performance. Wang et al [16] assembled a UV sensor based on vertically aligned TiO 2 nanowire arrays interconnected with ZnO nanosheets, which achieved UV light sensing performance.…”

Fabrication of the P-N Junction Ultraviolet Photodetectors Based on Metal Oxide Nanoparticles

“…Up to now, various device designs have been developed to fabricate efficient TiO2 based photodetectors (Huang et al, 2011;Karaagac et al, 2012;Li et al, 2012;Nicolaescu et al, 2021). Fabricating the heterojunction device with TiO2 and p-type semiconductor is one of the effective techniques for enhancing the photogenerated charge separation efficiency, which improves the photodetector performance (Yang et al, 2021). Moreover, an inner electric field is created at the interface with the formation of the p-n heterojunction.…”