A high-performance quantum dot superluminescent diode with a two-section structure

Abstract

Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in the two sections of the QD-SLD device, the output power of the SLD can be tuned over a wide range from 200 to 500 mW while preserving a broad emission spectrum based on the balance between the ground state emission and the first excited state emission of QDs. The gain process of the two-section QD-SLD with different pumping levels in the two sections is investigated.

Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source

“…A SLD based on InAs QDs (QD-SLD) was first proposed by Wang et al 11 and has been intensively studied. [12][13][14][15][16][17][18][19][20][21] We have fabricated a QD-SLD based on InAs QDs with controlled emission wavelengths 21 and demonstrated OCT imaging using a)…”

Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm

“…The increase in the power value by a factor of four highlights the capability of our bandgap engineered active region. It is noteworthy to mention that these power values correspond to our no-coated single facet results, which could further be increased by various techniques, for instance, facet coatings (antireflection coating), utilizing longer tapered and multisection devices [15], semiconductor optical amplifier in tandem with the SLD devices [16]. The effect of increasing the injection current on the emission bandwidth and the central emission wavelength (calculated by identifying the central wavelength at the FWHM) is shown in Fig.…”

Chirped InGaAs quantum dot molecules for broadband applications

“…In chirped QDM bilayer structures, two of the three characteristics can be combined to yield broadband or multi-GS emissions which can serve as active materials for SLDs [26] or dual-wavelength QD lasers [27], respectively.…”

“…Lateral QDMs spectra thus exhibit three basic PL characteristics: single peak, non-overlapping double peak, and overlapping double peak - controllable via z . In chirped QDM bilayer structures, two of the three characteristics can be combined to yield broadband or multi-GS emissions which can serve as active materials for SLDs [ 26 ] or dual-wavelength QD lasers [ 27 ], respectively.…”