A high-performance Ti3C2Tx/Lu2O3/GaN heterojunction deep ultraviolet photovoltaic photodetector enhanced via the dual-field coupling effect

Liang, Jiarong; Cai, Han; Li, Weisen; Lin, Zhuogeng; Tang, Xingui; Zhang, Dan; Zheng, Wei

doi:10.1039/d4tc00763h

J. Mater. Chem. C

2024

DOI: 10.1039/d4tc00763h

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A high-performance Ti₃C₂T_x/Lu₂O₃/GaN heterojunction deep ultraviolet photovoltaic photodetector enhanced via the dual-field coupling effect

Jiarong Liang,

Han Cai,

Weisen Li

et al.

Abstract: A high performance photovoltaic DUV photodetector was designed based on the dual-field coupling effect (pyro-phototronic effect and coupled with the photovoltaic effect), and further elucidated dual-field coupling effect enhanced mechanism.

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Cited by 5 publications

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Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer

Surya Reddy,

Rajagopal Reddy,

Janardhanam

et al. 2025

Vacuum

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Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer

Surya Reddy,

Rajagopal Reddy,

Janardhanam

et al. 2025

Vacuum

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A reversible positive and negative photoconductivity behavior modulated by polarization effect

Tang,

Lai,

Fang

et al. 2024

Applied Physics Letters

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Negative photoconductive devices exhibit a significant reduction in conductivity under illumination, enabling high-contrast optical modulation and promising great potential in optics. In this study, an ITO/BFCO/TiO2/FTO device was simply fabricated through a synergistic application of sol-gel and magnetron sputtering techniques. Interestingly, the ferroelectric polarization can be reversibly modulated by a low bias voltage in the ITO/BFCO/TiO2/FTO device, thereby exhibiting bipolar voltage dependent reversible behavior of positive and negative photoconductivity. This mechanism has been discussed, where the combined effect of illumination and applied voltage induces internal polarization reversal in Bi2FeCrO6, leading to a transition in the resistance state from low to high. This transition results in an elevation of the energy band, thereby impeding the migration of charge carriers. Additionally, femtosecond laser transient absorption spectroscopy reveals redshift in the initial absorption peak, indicating changes in the band structure induced by illumination, crucial for understanding carrier dynamics in a non-equilibrium state.

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Advanced Organic-Inorganic Hybrid Solar-Blind UV Photodetector With β-Ga₂O₃ Film From Thermal Oxidation

Liang,

Li,

Xie

et al. 2024

IEEE Trans. Electron Devices

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A high-performance Ti₃C₂T_x/Lu₂O₃/GaN heterojunction deep ultraviolet photovoltaic photodetector enhanced via the dual-field coupling effect

Abstract: A high performance photovoltaic DUV photodetector was designed based on the dual-field coupling effect (pyro-phototronic effect and coupled with the photovoltaic effect), and further elucidated dual-field coupling effect enhanced mechanism.

Cited by 5 publications

References 51 publications

Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer

Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer

A reversible positive and negative photoconductivity behavior modulated by polarization effect

Advanced Organic-Inorganic Hybrid Solar-Blind UV Photodetector With β-Ga₂O₃ Film From Thermal Oxidation

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