A high power X‐band internally‐matched power amplifier with 705 W peak power and 51.7% PAE

Abstract

A high power and high efficiency fully internally-matched GaN power amplifier operating at X-band is proposed. The device is realized by matching four GaN power bars of 18-mm gate periphery. To reduce the size, single layer capacitors with high permittivity are used, and the impedance matching circuits are fabricated on Al 2 O 3 ceramic substrate. The device exhibits saturated output power of more than 660 W with power gain above 9.8 dB within the frequency range of 8.2-8.8 GHz, based on the pulse mode of 100 μs pulse width and 10% duty. In addition, the highest saturated output power and power added efficiency reach 705 W and 51.7% with packaging compact size (26 mm  17.4 mm).