A High-Reliability Carry-Free Gate Driver for Flexible Displays Using a-IGZO TFTs

Kim, Jong-Seok; Byun, Jung-Woo; Jang, Jun-Hwan; Kim, Yong-Duck; Han, Ki-Lim; Park, Jin‐Seong; Choi, Byong‐Deok

doi:10.1109/ted.2018.2843180

Cited by 20 publications

(12 citation statements)

References 21 publications

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“…To reduce the effects of mechanical stress, some efforts about gate driver IC of flexible displays can be made such as adopting a carry-free gate driver. 28 In general, the flexible ZnO TFTs do not exhibit noticeably degraded in electrical performance during bending test, demonstrating good mechanical stability under bending stress. A comparison with recent reports of flexible oxide TFTs is exhibited in Table 3.…”

Section: Resultsmentioning

confidence: 91%

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Dong

et al. 2021

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Flexible ZnO thin‐film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrate with a maximum processing temperature of 200 °C. The flexible ZnO TFTs show competitive electrical properties with high saturation mobility (μsat) of 17.5 cm2/Vs, small subthreshold slope (SS) of 91 mV/dec, high Ion/Ioff of 3.8×109 and good uniformity. The larger characteristic trapping time τ for flexible ZnO TFT under NBS is the indication of less trapped charges compared with the device under PBS. In addition, we also investigate the mechanical bending test of flexible ZnO TFTs. The flexible ZnO TFTs exhibit a negative turn‐on voltage (Von) shift and degraded SS with increasing tensile strains because the mechanical strain at the bending part of TFT channel generates donor‐like and acceptor‐like defects. Our results demonstrate that ALD process flexible ZnO TFTs exhibiting tremendous potential to be applicable in flexible electronics.

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Section: Resultsmentioning

confidence: 91%

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Dong

et al. 2021

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“…Unlike a carry-type gate driver circuit, a decoder-type gate driver operates independently stage by stage [6]. In addition, we add the fault detection circuit [7] and redundant unit to achieve faulttolerant architecture.…”

Section: Proposed Gate Driver Circuitmentioning

confidence: 99%

“…Because the size of the transistor M12 is large, the OUTPUT node voltage can be discharged rapidly. Also, the EN node is charged by CLK2, transistor M12 pulls down the OUTPUT node during the period (6) and 7. Decoder-Unselected: Since period (8), the block1 remains decoder-unselected state which means at least one of the transistor among MD1-MD3 are turned on by decoder signals.…”

Section: Decoder-selectedmentioning

confidence: 99%

25‐3: Fault‐Tolerant Integrated Gate Driver for Flexible Displays

Chung

Nam

et al. 2020

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This paper proposes a fault-tolerant integrated gate driver for flexible displays. To achieve fault-tolerance, decoder-type gate driver circuit is chosen. Fault detection circuit and redundant circuits are also added. The function of the proposed circuit is verified by simulation and fabrication results. The measurement results of the proposed gate driver with 16 stages on PI substrate comprising a-IGZO TFT is presented.

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“…Although already being widely used in TFT-LCD products of mobile phones, tablets, and TV displays, TFT integrated gate driver design is still challenging for the in-cell touch TFT-LCD display. For the conventional displays, consecutive row scanning pulses are provided by the gate driver for the whole display frame [3], [4]. In contrast, for the in-cell touch display, discontinuous row scanning pulses are required [5].…”

Section: Introductionmentioning

confidence: 99%