A high-resolution transmission electron microscopy investigation of the microstructure of TiO2 anatase film deposited on LaAlO3 and SrTiO3 substrates by laser ablation

Zhu, Min; Chikyow, Toyohiro; Ahmet, Parhat; Naruke, Tamami; Murakami, Makoto; Matsumoto, Yuji; Koinuma, Hideomi

doi:10.1016/s0040-6090(03)00939-8

Cited by 25 publications

(11 citation statements)

References 8 publications

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“…12,19,21 This is due to the very good in-plane lattice matching between the ͑100͒ plane of LAO ͑0.379 nm͒ and the ͑004͒ plane of anatase ͑0.378 nm͒. It is well known that the use of such LAO substrates promotes the growth of high quality anatase films without rutile or other titanium oxide phases.…”

Section: B Structural Properties and Epitaxial Relationshipsmentioning

confidence: 99%

“…21 While the epitaxial growth of anatase on LAO single crystal is well documented, the growth of rutile films on this substrate has not been widely studied. 21 While the epitaxial growth of anatase on LAO single crystal is well documented, the growth of rutile films on this substrate has not been widely studied.…”

Section: B Structural Properties and Epitaxial Relationshipsmentioning

confidence: 99%

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Structural, optical, and electrical properties of epitaxial titanium oxide thin films on LaAlO3 substrate

Sbai

Perrière

Gallas

et al. 2008

Journal of Applied Physics

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Articles you may be interested inEffect of SnO2 concentration on the tuning of optical and electrical properties of ZnO-SnO2 composite thin films Electrical and optical properties of transparent conducting In4+xSn3−2xSbxO12 thin films J. Appl. Phys. 110, 033702 (2011); 10.1063/1.3605552Structure-related optical properties of ( Pb , La ) ( Zr , Ti ) O 3 thin films on indium tin oxide∕quartz substrates Titanium oxide thin films were prepared by pulsed-laser deposition on LaAlO 3 single crystal substrate at 700°C. Pure anatase films are obtained at high oxygen pressure ͑10 −1 mbar͒, while the rutile phase is evidenced at low oxygen pressure ͑10 −5 mbar͒ despite a large oxygen deficiency ͑O / Ti= 1.75͒. From asymmetric x-ray diffraction measurements, the in-plane epitaxial relationships be0tween the substrate and the titanium oxide phases are highlighted. Optical constants ͑refractive index n and extinction coefficient k͒ were deduced from ellipsometric measurements. The optical band gap energies of the anatase and rutile films are found to be 3.4 and 3.3 eV, respectively. Since the nearly stoichiometric anatase films are resistive ͑Ͼ10 3 ⍀ cm͒, the large oxygen deficiency in rutile films leads to noticeable increase in the conductivity due to the Ti 3+ species, which supply electrons in the conduction band. At low temperature ͑T Ͻ 200 K͒ the resistivity of rutile films versus temperature may be explained by a variable range hopping mechanism based on both two or three dimensional electron transfer between the Ti 3+ and Ti 4+ species.

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Section: B Structural Properties and Epitaxial Relationshipsmentioning

confidence: 99%

Section: B Structural Properties and Epitaxial Relationshipsmentioning

confidence: 99%

Structural, optical, and electrical properties of epitaxial titanium oxide thin films on LaAlO3 substrate

Sbai

Perrière

Gallas

et al. 2008

Journal of Applied Physics

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“…Experimentally, Tuan et al [16] deposited epitaxial anatase TiO 2 onto the STO substrate and found that the valence band offset at the interface is conducive to facile electron transport across the interface. Further investigations by the high-resolution transmission electron microscopy (HRTEM) confirms that the grown anatase thin film has an epitaxial relation to the STO substrate [17], although a small number of defects are indeed observed near the interface. Interestingly, Dabney et al [18] deposited Nb-doped TiO 2 films onto both the STO and LaAlO 3 substrates and discovered that the films on the STO exhibit better crystallinity and higher conductivity, implying a fundamental role of the substrates on the properties of the grown thin films.…”

Section: Introductionmentioning

confidence: 88%

Structural and electronic impact of SrTiO3 substrate on TiO2 thin films

et al. 2012

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We demonstrate that the atomic structures, electronic states, and bonding nature of the interface between SrTiO 3 substrate and anatase TiO 2 thin films could be related and technologically manipulated at the atomic level. Applying advanced transmission electron microscopy, the grown anatase TiO 2 thin films are found to make a clean and direct contact to the SrTiO 3 substrates in an epitaxial, coherent, and atomically abrupt way. The atomic-resolution microscopic images reveal that the interface comprises SrO-terminated SrTiO 3 and Ti-terminated TiO 2 with the interfacial Ti of TiO 2 sitting above the hollow site, which is confirmed theoretically to be the most energetically favorable. Quantitatively, the first-principles calculations predict that the oxygen sublattice at the interface undergoes a notable reconstruction, i.e., the interfacial O atoms of TiO 2 are displaced largely toward the SrO plane of the SrTiO 3 , flattening the originally zigzag TiO 2 atomic chains. Consequently, the interfacial layers suffer a remarkable modification in the charge accumulation and also a deviation in the density of states from their bulk counterparts, indicating that the substrate can have an impact on the deposited thin films electronically. Using several analytic methods, the SrTiO 3 /TiO 2 interface is found to take on a metallic nature, and the interfacial bonding is determined to be of a mixed covalent and ionic character. This combined experimental and theoretical investigation gains insight into the complex atomic and electronic structures of the buried interface, which are fundamental for relating the atomic-scale structures to their properties on a quantum level.

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“…Titanium dioxide (TiO 2 ) has been extensively investigated in the past decades due to its excellent electric, optical and catalytic properties [1], chemical stability and non-toxicity [2]. TiO 2 films are widely used in many fields such as functional materials, adsorbent catalysts, gas and humidity sensors as well as in ecology for wastewater treatment and air purification.…”

Section: Introductionmentioning

confidence: 99%