A High Schottky Barrier iTFET with Control Gate for Low Power Application

Abstract

This research presents a simulated device structure for an Inductive Line Tunneling Tunnel Field-Effect Transistor (iTFET) with a high Schottky barrier and a control gate. We based our design process on real-world production components, factored in actual processing steps, and verified all software parameters to ensure the study's close alignment with practical manufacturing scenarios. Our configuration employs Silicon Germanium (SiGe), a narrow-bandgap semiconductor known for its cost-effectiveness, mature technology, and ability to enhance electron tunneling. We implemented Schottky Barrier Height (SBH) modulation engineering to increase the ON- state current (ION) by integrating an electrode into the semiconductor via Schottky contact. To further optimize the device performance, a control gate was included between the source and drain regions. This modification increased the ION and reduced the OFF-state current (IOFF) through the manipulation of the electric field. The simulation results demonstrated an average subthreshold swing (SSAVG) of 31.5 mV/dec, an ION of 4.96x10-6 A/μm, and an ION/IOFF ratio of 1.1x108 at a VDS of 0.2V, indicating a remarkably low subthreshold swing. These outcomes highlight the feasibility of utilizing a low thermal budget approach to fabricate high-performing TFETs that are well-suited for economical and low-energy applications.