A high-sensitivity SnSe/Si heterojunction position-sensitive detector for ultra-low power detection

Hu, Bing; Liu, Yunjie; Zhang, Bo; Guo, Fuhai; Zhang, Mingcong; Yu, Weizhuo; Li, Siqi; Hao, Lanzhong

doi:10.1039/d3nr05906e

Cited by 4 publications

References 42 publications

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A Photoconductor‐Type Position Recognition Mechanism with the Intrinsic High Gain for the Development of Ultra‐Sensitive Light Position Detection

Zeng,

Liu,

Zhang

et al. 2024

Advanced Optical Materials

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Position‐sensitive detectors (PSDs) are widely used in optical inspection applications, such as precise measurement of distance and angle, surface profiling, and motion tracking, etc. The lateral photovoltaic effect is the mechanism employed by most PSDs to determine position, but its gain‐free nature hinders weak‐light detection and applications. Here, a new position recognition mechanism with an intrinsic high gain is proposed and employ it to design a weak‐light and large‐size photoconductor‐type PSD. The position recognition is established by the intrinsic link between the gain and channel length in a photoconductor, and the designed linear correlation between the channel length and position. The photoconductor‐type graphene/Si PSD based on the recognition mechanism shows an active length of over 1 mm, a high spatial position resolution at the sub‐micrometer level, and a low detection limit power of 100 pW. Compared with Si PSDs, the gain of the photoconductor‐type PSD is improved by 3–4 orders of magnitude. In addition, the operational wavelength range of the PSD is expanded to include the near‐infrared region, specifically at 1300 and 1550 nm. The new position recognition mechanism paves the way for the development of ultra‐sensitive light position detection.

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A Photoconductor‐Type Position Recognition Mechanism with the Intrinsic High Gain for the Development of Ultra‐Sensitive Light Position Detection

Zeng,

Liu,

Zhang

et al. 2024

Advanced Optical Materials

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A Dual‐Functional Integration of Photodetectors and Artificial Optoelectronic Synapses on a VO₂/WO₃ Heterojunction Device

Guo,

Liu,

Zhang

et al. 2024

Small Methods

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Bionic visual systems require multimodal integration of eye‐like photodetectors and brain‐like image memory. However, the integration of photodetectors (PDs) and artificial optoelectronic synapses devices (OESDs) by one device remains a giant challenge due to their photoresponse discrepancy. Herein, a dual‐functional integration of PDs and OESDs based on VO2/WO3 heterojunctions is presented. The device can be able to realize a dual‐mode conversion between PDs and OESDs through tuning the bias voltage. Under zero bias voltage, the device exhibiting excellent photodetecting behaviors based on the photovoltaic effect, showing a high self‐powered photoresponsivity of 18.5 mA W−1 and high detectivity of 7.5 × 1010 Jones with fast photoresponse. When the external bias voltages are applied, it can be acted as an OESD and exhibit versatile electrical and photonic synaptic characteristics based on the trapping and detrapping effects, including synaptic plasticity and learning‐experience behaviors. More importantly, benefiting from the excellent photosensing ability and transporting properties, the device shows ultralow‐power consumption of 39.0 pJ and a 4 × 4 OESDs array is developed to realize the visual perception and memory. This work not only supplies a novel route to realize complex functional integration just in one device, but also offers effective strategies for developing neuromorphic visual system.

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Ag Doping Modified SnSe-Based Flexible Memristors for Artificial Optoelectronic Synapses

Hu,

Liu,

Zhang

et al. 2024

ACS Appl. Electron. Mater.

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Artificial optoelectronic synapses (OESs) have attracted extensive attention in neuromorphic vision. However, the fabrication of flexible OES is challenging, severely limiting its application in wearable optoelectronic devices. Herein, a method to improve the performance of two-dimensional SnSe-based flexible OES devices by doping Ag atoms is presented. The fabricated device exhibits critical synaptic functions under electrical stimulation, such as short-and long-term synaptic plasticity and learning experience behaviors. Especially, the device demonstrates pronounced optical synaptic behavior through the modulation of optical signals, mainly including short-term and long-term memory. Additionally, benefiting from the excellent mechanical properties of SnSe, the device shows outstanding flexibility, enduring over 100 bending cycles. The doping of Ag atoms addresses the challenge of suboptimal electrical performance in traditional memristors and demonstrates an optical synaptic behavior rarely observed in SnSe devices. This study not only indicates the viability of doping engineering in achieving and enhancing the synaptic plasticity of the OES devices but also promotes the advancement of flexible neuromorphic vision technologies in the future.

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A high-sensitivity SnSe/Si heterojunction position-sensitive detector for ultra-low power detection

Abstract: Position-sensitive detectors (PSDs) based on the lateral photovoltaic effect are crucial components in non-contact distance measurement, process control, guidance systems, and other related applications. However, PSDs are challenging due to...

Cited by 4 publications

References 42 publications

A Photoconductor‐Type Position Recognition Mechanism with the Intrinsic High Gain for the Development of Ultra‐Sensitive Light Position Detection

A Photoconductor‐Type Position Recognition Mechanism with the Intrinsic High Gain for the Development of Ultra‐Sensitive Light Position Detection

A Dual‐Functional Integration of Photodetectors and Artificial Optoelectronic Synapses on a VO₂/WO₃ Heterojunction Device

Ag Doping Modified SnSe-Based Flexible Memristors for Artificial Optoelectronic Synapses

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A high-sensitivity SnSe/Si heterojunction position-sensitive detector for ultra-low power detection

Abstract: Position-sensitive detectors (PSDs) based on the lateral photovoltaic effect are crucial components in non-contact distance measurement, process control, guidance systems, and other related applications. However, PSDs are challenging due to...

Cited by 4 publications

References 42 publications

A Photoconductor‐Type Position Recognition Mechanism with the Intrinsic High Gain for the Development of Ultra‐Sensitive Light Position Detection

A Photoconductor‐Type Position Recognition Mechanism with the Intrinsic High Gain for the Development of Ultra‐Sensitive Light Position Detection

A Dual‐Functional Integration of Photodetectors and Artificial Optoelectronic Synapses on a VO2/WO3 Heterojunction Device

Ag Doping Modified SnSe-Based Flexible Memristors for Artificial Optoelectronic Synapses

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A Dual‐Functional Integration of Photodetectors and Artificial Optoelectronic Synapses on a VO₂/WO₃ Heterojunction Device