A High-Speed and High-Reliability TRNG Based on Analog RRAM for IoT Security Application

Lin, Bohan; Gao, Bin; Pang, Yongqiang; Yao, Peng; Wu, Dong; Hu, Hongchang; Tang, Jianshi; Qian, He; Wu, Huaqiang

doi:10.1109/iedm19573.2019.8993486

Cited by 32 publications

(18 citation statements)

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“…Over the last few years there has been a lot of activity across research groups proposing efficient TRNG based on resistiveswitching devices [4][5][6]. Among these devices, bipolar oxidebased RAM (so-called OxRAM) have shown interesting properties [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

Aziza

Postel-Pellerin

Bazzi

et al. 2020

IEEE Trans. Nanotechnology

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A novel True Random Number Generator circuit fabricated in a 130nm HfO2-based resistive RAM process is presented. The generation of the random bit stream is based on a specific programming sequence applied to a dedicated memory array. In the proposed programming scheme, all the cells of the memory array are addressed at the same time while the current provided to the circuit is limited to program only a subset of the memory array, resulting in a stochastic distribution of cell resistance values. Some cells are switched in a low resistive state, other cells are slightly programmed to reach an intermediate resistance state, while the remaining cells maintain their initial high resistance state. Resistance values are next converted into a bit stream and confronted to National Institute of Standards and Technology (NIST) test benchmarks. The generated random bit stream has successfully passed twelve NIST tests out of fifteen. Compared to state-of-the-art resistive RAM-based true random number generators, our proposed methodology is the first one to leverage on programming current limitation at a memory array level.

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Section: Introductionmentioning

confidence: 99%

True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

Aziza

Postel-Pellerin

Bazzi

et al. 2020

IEEE Trans. Nanotechnology

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“…As the random number generation relies on the pulse number variation, different pulse amplitudes and widths have significant impact on the TRNG throughput and randomness. According to [17], using pulses with greater amplitude leads to a gradual decrease in the average number of the pulses used to generate one true random number, and thus the performance is improved. However, the too-strong pulses finally lead to the failure of randomness source.…”

Section: Trng Designmentioning

confidence: 99%

“…The consecutively produced two bits are XORed to generate the final random number. The advantages of this TRNG design is described in detail in [17]. The proposed TRNG can achieve high speed and high reliability simultaneously, and can be easily implemented by adding a one-bit counter and an alternative de-bias circuit to a RRAM array.…”

Section: Trng Designmentioning

confidence: 99%

“…The randomness can be easily extracted from RRAM, and negligible entropy is lost in the digitization process. Plenty of randomness sources have been successfully demonstrated to design PUF and TRNG, including resistance variation [13][14][15][16], write speed variation [17][18][19], probabilistic switching [20][21][22], readout noise [23][24], and sneaky path [25][26]. Besides better randomness, RRAM based PUF and TRNG inherit good characteristics like high speed, small area, and low power consumption from RRAM, making them suitable for IoT edge applications.…”

Section: Introductionmentioning

confidence: 99%

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A Unified Memory and Hardware Security Module Based on the Adjustable Switching Window of Resistive Memory

Lin

Gao

Pang

et al. 2020

IEEE J. Electron Devices Soc.

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Physically unclonable function (PUF) and true random number generator (TRNG) are critical primitives to provide lightweight hardware protection. As area is tightly restricted in IoT applications, merging PUF and TRNG is a novel trend to achieve higher area efficiency. In this work, a novel tri-functional module is proposed and experimental demonstrated using RRAM for the first time. A two-phase forming process is designed to generate and store PUF ID utilizing the impact of different forming conditions on the switching window. As PUF ID is stored by the switching window, instead of a fixed resistance, PUF cells can be written to low resistance state and high resistance state as usual, and can be used as memory and TRNG. The inter-Hamming distance of the generated PUF IDs approaches 0.5, and with the majority voting readout strategy, low BER can be achieved in a wide range of temperatures from-40 o C to 125 o C. TRNG produces the true random numbers based on the parity of the number of pulses consumed in a write-zero process. The generated random numbers are uniform and uncorrelated after XORed, and the statistical randomness is verified by NIST SP800-22 tests.

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“…Moreover, the inherent variability of RRAMs, due to the stochastic nature of their switching mechanism [13], has positioned these devices as one of the most competitive candidates for the development of security primitives [14]. In fact, RRAMs have attracted the attention of the research community for the implementation of PUFs [15][16][17][18][19][20][21][22][23] and true random number generators (TRNGs) [24][25][26][27][28][29]. Nevertheless, RRAM-based circuits may also introduce security vulnerabilities of their own.…”

Section: Introductionmentioning

confidence: 99%

Serial RRAM Cell for Secure Bit Concealing

et al. 2021

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Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useless when the device is powered off. In this context, this work proposes the association of two serial RRAM devices as a basic cell to store sensitive data, which could solve this bothersome problem. This cell has three states: ‘1’, ‘0’, and masked. When the system is powered off or the data is not used, the cell is set to the masked state, where the cell still stores a ‘1’ or a ‘0’ but a malicious adversary is not capable of extracting the stored value using reverse engineering techniques. Before reading, the cell needs to be unmasked and it is masked afterwards until the next reading request. The operation of the cell also provides robustness against side-channel attacks. The presented experimental results confirm the validity of the proposal.

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A High-Speed and High-Reliability TRNG Based on Analog RRAM for IoT Security Application

Cited by 32 publications

References 1 publication

True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

A Unified Memory and Hardware Security Module Based on the Adjustable Switching Window of Resistive Memory

Serial RRAM Cell for Secure Bit Concealing

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