A high supply voltage bandgap reference circuit using drain-extended MOS devices

Abstract

A bandgap reference circuit that uses high-voltage drainextended MOS (DeMOS) devices is presented for high supply voltage application without using a voltage regulator for the bandgap core circuit. The bandgap reference circuit was fabricated using commercially available 0.18 μm high-voltage DeMOS technology. Measurement result of the chip shows that the reference voltage change rate for VDD variation from 5 V to 30 V and for the temperature variation from −40 • C to +140 • C were 1.16 mV/V and 0.84 mV/ • C, respectively. The measured reference voltage with the supply voltage of 15 V at room temperature was 2.487 V. The current consumption and the active area were 3.2 μA and 320 × 345 μm 2 , respectively.