A high-throughput contact-hole resolution metric for photoresists: full-process sensitivity study

Anderson, Christopher N.; Naulleau, Patrick

doi:10.1117/12.768551

Cited by 8 publications

(2 citation statements)

References 17 publications

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“…Using this approximation, one can forego experimental EUV resist blur estimation methods such as those described by Naulleau et al 7,18,35 or van Steenwinckel et al 33,36,37 Substantial EUV resist resolution metric development by Naulleau et al indicate that, if care is taken to account for materials-based resist failure (pattern collapse, etc.,) limiting resolution and resist blur are generally well correlated. We are cognizant that this simplification results in an exposure-tool and illumination-dependent constant Z, since NILS is not accounted for.…”

Section: A Simplified Rls Assessment Of L/s Patterning Using the Psi mentioning

confidence: 99%

Evaluation of EUV resist materials for use at the 32 nm half-pitch node

et al. 2008

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The 2007 International Technology Roadmap for Semiconductors (ITRS) 1 specifies Extreme Ultraviolet (EUV) lithography as one leading technology option for the 32nm half-pitch node, and significant world wide effort is being focused towards this goal. Readiness of EUV photoresists is one of the risk areas. In 2007, the ITRS modified performance targets for high-volume manufacturing EUV resists to better reflect fundamental resist materials challenges. For 32nm half-pitch patterning at EUV, a photospeed range from 5-30 mJ/cm 2 and low-frequency linewidth roughness target of 1.7nm (3σ) have been specified. Towards this goal, the joint INVENT activity (AMD, CNSE, IBM, Micron, and Qimonda) at Albany evaluated a broad range of EUV photoresists using the EUV MET at Lawrence Berkeley National Laboratories (LBNL), and the EUV interferometer at the Paul Scherrer Institut (PSI), Switzerland. Program goals targeted resist performance for 32nm and 22nm groundrule development activities, and included interim relaxation of ITRS resist performance targets. This presentation will give an updated review of the results. Progress is evident in all areas of EUV resist patterning, particularly contact/via and ultrathin resist film performance. We also describe a simplified figure-of-merit approach useful for more quantitative assessment of the strengths and weaknesses of current materials.

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Section: A Simplified Rls Assessment Of L/s Patterning Using the Psi mentioning

confidence: 99%

Evaluation of EUV resist materials for use at the 32 nm half-pitch node

et al. 2008

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“…To demonstrate the efficacy of the MPPM model, we compare the model-produced deprotection point spread function (PSF) to measured resist blur using the contact-hole exposure latitude method [8] for a commercial chemically amplified resist. Figure 1 shows the model PSF which is generated by seeding the model with an aerial image comprised of light concentrated into a single pixel which is on the order of 1-nm in size.…”

Section: Introductionmentioning

confidence: 99%

Enabling EUV Resist Research at the 1x and Smaller Regime

Naulleau

Anderson

Chao

et al. 2015

J. Photopol. Sci. Technol.

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With the slipping of the insertion node for extreme ultraviolet lithography, demands on resist resolution have increased further stressing sensitivity requirements. A variety of resists, both chemically amplified and not, have been developed meeting resolution needs, but falling short on sensitivity and line-width roughness (LWR). Note that resolution is an absolute mandatory requirement, the true tradeoff that must be considered is between sensitivity and contact hole printing is a crucial application for extreme ultraviolet lithography and is particularly challenged by resist sensitivity due to inherent inefficiencies in darkfield contact printing. Checkerboard strong phase shift masks have the potential to alleviate this problem through a 4× increase in optical efficiency. The feasibility of this method is demonstrated using the SEMATECH-Berkeley Microfield Exposure Tool pseudo phase shift mask configuration and preliminary results are provided on the fabrication of an etched multilayer checkerboard phase shift mask.

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Influence of base and photoacid generator on deprotection blur in extreme ultraviolet photoresists and some thoughts on shot noise

Anderson

Naulleau

Niakoula

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Extreme ultraviolet lithography based nanofabrication using a bilevel photoresistA contact-hole deprotection blur metric has been used to monitor the deprotection blur of an experimental open platform resist ͑EH27͒ as the wt % of base and photoacid generator ͑PAG͒ were varied. A six times increase in base wt % is shown to reduce the size of successfully patterned 1:1 line-space features from 52 to 39 nm without changing deprotection blur. Corresponding isolated line edge roughness is reduced from 6.9 to 4.1 nm. A two times increase in PAG wt % is shown to improve 1:1 line-space patterning from 47 to 40 nm without changing deprotection blur or isolated line edge roughness. A discussion of improved patterning performance as related to shot noise and deprotection blur concludes with a speculation that the spatial distribution of PAG molecules has been playing some role, perhaps a dominant one, in determining the uniformity of photogenerated acids in the resists that have been studied.

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A high-throughput contact-hole resolution metric for photoresists: full-process sensitivity study

Cited by 8 publications

References 17 publications

Evaluation of EUV resist materials for use at the 32 nm half-pitch node

Evaluation of EUV resist materials for use at the 32 nm half-pitch node

Enabling EUV Resist Research at the 1x and Smaller Regime

Influence of base and photoacid generator on deprotection blur in extreme ultraviolet photoresists and some thoughts on shot noise

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