A High-Voltage Isolated Current Sense Amplifier for Fully CMOS Compatible Non-volatile Memories

Abstract

A high-speed current sense amplifier (SA) blocking 8.3V during program/erase of the CMOS compatible nonvolatile memories is proposed and fabricated using the standard 0.35m CMOS process. After the memory cells are programmed, the measured access time is as fast as 13ns for the current difference of 3A at V DD = 3.3V.