A highly-efficient approach for reducing phase transition temperature of VO2 polycrystalline thin films through Ru4+-doping

Gu, Deen; Zheng, Honghang; Ma, Yonghai; Xu, Shuozhi; Zhou, Xin

doi:10.1016/j.jallcom.2019.03.214

Cited by 31 publications

(22 citation statements)

References 58 publications

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“…Also, it is worth noting that V 5+ ions are probed by XPS while there are no characteristic peaks of the V 2 O 5 phase in XRD patterns. Considering that XPS is a surfacesensitive technique and the XRD analysis reveals the lattice structure of the whole sample, the presence of V 5+ ions is believed to be derived from surface oxidation during storage and it exists only on the surface of samples as reported previously [24][25][26][27] . Figure 2 b further shows the close-up views of (011) peak for all the samples after fitting with Lorentzian function.…”

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 73%

“…For all the films, the (011) peak seems to be of higher intensity than the other peaks, revealing a preferential growth along (011) facet. No diffraction peaks from other vanadium oxide ( [22] or titanium/ruthenium oxide phases can be detected [24]. Also, it is worth noting that V 5+ ions are probed by XPS while there are no characteristic peaks of the V 2 O 5 phase in XRD patterns.…”

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 99%

“…All the Raman peaks for VO can be attributed to the A g and B g phonon modes from the monoclinic VO 2 [35]. No Raman modes from V 2 O 5 can be observed [24]. Three prominent Raman modes (ω 1 around 193 cm −1 , ω 2 around 223 cm −1 , and ω 3 around 613 cm −1 ) are used for further probing the influence of the doping on the crystalline structure of VO 2 thin films.…”

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 99%

“…This indicates that there is local disturbance in monoclinic VO 2 lattice due to the existence of Ti and Ru ions. The previous work has demonstrated that the Ru 4+ ions in the VO 2 lattice conduce to inducing the local tetragonal symmetry in the monoclinic framework since the Ru-O coordination exhibits an almost identical symmetry to tetragonal VO 2 [24,38]. The tetragonal symmetry has lower Raman activity than the monoclinic phase [39].…”

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 99%

“…Dense surface morphology of VTRO-3 should originate from the inhibition effect of Ru 4+ ions in VO 2 lattice on the crystalline growth as revealed by the XRD analysis. Ru 4+ ions suppress the coalescence of VO 2 grains by restraining the grain boundary (GB) mobility [24]. VTRO-3 has smaller crystallite size than VO and VTO (Table 1).…”

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 99%

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A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

et al. 2020

Nanoscale Res Lett

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Preparing the thermal-sensitive thin films with high temperature coefficient of resistance (TCR) and low resistivity by a highly compatible process is favorable for increasing the sensitivity of microbolometers with small pixels. Here, we report an effective and process-compatible approach for preparing V 1-x-y Ti x Ru y O 2 thermal-sensitive thin films with monoclinic structure, high TCR, and low resistivity through a reactive sputtering process followed by annealing in oxygen atmosphere at 400°C. X-ray photoelectron spectroscopy demonstrates that Ti 4+ and Ru 4+ ions are combined into VO 2. X-ray diffraction, Raman spectroscopy, and transmission electron microscopy reveal that V 1-x-y Ti x Ru y O 2 thin films have a monoclinic lattice structure as undoped VO 2. But V 1-x-y Ti x Ru y O 2 thin films exhibit no-SMT feature from room temperature (RT) to 106°C due to the pinning effect of high-concentration Ti in monoclinic lattice. Moreover, RT resistivity of the V 0.8163 Ti 0.165 Ru 0.0187 O 2 thin film is only one-eighth of undoped VO 2 thin film, and its TCR is as high as 3.47%/°C.

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Section: High-concentration Ti Was Introduced Intomentioning

confidence: 73%

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 99%

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 99%

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 99%

Section: High-concentration Ti Was Introduced Intomentioning

confidence: 99%

See 3 more Smart Citations

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

et al. 2020

Nanoscale Res Lett

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The valence conversion mechanism for Mo‐doped VO₂ films with enhanced thermochromic properties

Pei

Han

et al. 2022

Zeitschrift anorg allge chemie

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Reducing the phase transition temperature (Tc) of VO2 films to achieve the application in the field of Smart Home is still a challenge. Thus, in the work, the ultra‐thin VO2 films with different Mo doping amounts were successfully prepared by an economic sol‐gel method and atmosphere annealing, aiming to further investigate the mechanism of the decrease of Tc. The results show that the VO2 films with 3 at % Mo doping possess the Tc of 29.5 °C. Notedly, in the as‐prepared films, the maximum transmittance in the visible region (Tvis) is 46.3 % and the solar direct transmittance (Tsol) is 45.8 %. According to the XPS spectra, it is confirmed that the Mo doping prominently induces the valence change of V ions from +4 to +3, inhibiting the strain in the phase transition process of VO2 films, and leading to the decrease of Tc. Our work will provide a feasible solution for reducing the Tc of the ultra‐thin VO2 films.

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The Ru-doped VO2 films fabricated by rapid thermal annealing of V–Ru co-sputtered alloy films with lowered phase transition temperature and narrowed hysteresis for smart windows

Sun,

Liu,

Dong

et al. 2024

Appl. Phys. A

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A highly-efficient approach for reducing phase transition temperature of VO2 polycrystalline thin films through Ru4+-doping

Cited by 31 publications

References 58 publications

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

The valence conversion mechanism for Mo‐doped VO₂ films with enhanced thermochromic properties

The Ru-doped VO2 films fabricated by rapid thermal annealing of V–Ru co-sputtered alloy films with lowered phase transition temperature and narrowed hysteresis for smart windows

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A highly-efficient approach for reducing phase transition temperature of VO2 polycrystalline thin films through Ru4+-doping

Cited by 31 publications

References 58 publications

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

The valence conversion mechanism for Mo‐doped VO2 films with enhanced thermochromic properties

The Ru-doped VO2 films fabricated by rapid thermal annealing of V–Ru co-sputtered alloy films with lowered phase transition temperature and narrowed hysteresis for smart windows

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The valence conversion mechanism for Mo‐doped VO₂ films with enhanced thermochromic properties