A Highly Efficient Dual-band Harmonic-tuned GaN RF Synchronous Rectifier with Integrated Coupler and Phase Shifter

Hoque, Aminul; Ali, Sheikh Nijam; Mokri, Mohammad Ali; Gopal, Srinivasan; Chahardori, Mohammad; Heo, Deukhyoun

doi:10.1109/mwsym.2019.8700900

Cited by 12 publications

(4 citation statements)

References 6 publications

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“…This work achieved a relatively high output dc power (7.81 W) with very high RF-dc conversion efficiency in the relatively higher 2.4 GHz frequency, using a transistor with a relatively low power capacity (6 W). In contrast, the authors of [ 18 , 19 , 20 , 21 ] used a transistor with a relatively higher output power capacity (10 W).…”

Section: Implementation and Experimental Resultsmentioning

confidence: 99%

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

Shin

et al. 2021

Sensors

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This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F power amplifier based on time reversal duality. The design of the class-F power amplifier deploys an independent second harmonic tuning circuit in the matching networks to individually optimize the impedances of the fundamental and the second harmonic. The synchronous rectifier at the 2.4 GHz frequency is designed and implemented using a 6 W gallium nitride high electron mobility transistor (GaN HEMT). Peak RF-dc conversion efficiency of the rectifier of 69.6% is achieved with a dc output power of about 7.8 W, while the peak drain efficiency of the class-F power amplifier is 72.8%.

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Section: Implementation and Experimental Resultsmentioning

confidence: 99%

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

Shin

et al. 2021

Sensors

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“…Furthermore, a phase tuning network is added to form a selfsynchronous rectifier in order to improve the efficiency of the rectifier. Phase tuning network can be integrated with the PA circuit 7 or can be added externally. 10 In order to obtain the greatest possible integration, this work adopts the form of phase feedback network and PA circuit integration.…”

Section: Analysis Of the Proposed Pa/rectifiermentioning

confidence: 99%

“…3,4 These transistor-based rectifiers are based on the principle of time-reversal duality, 5 which means that they are derived from PA circuitry. 6,7 Thus, it provides a possibility of designing a circuit module that integrates both the PA and the rectifier operation modes. Such multiplexed circuit module with high RF power capacity is very promising in bidirectional high-power MPT systems such as the application of high power far-field MPT system (spaceship launching 8 and the planned space solar power system 9 ).…”

Section: Introductionmentioning

confidence: 99%

Switchable function GaN power amplifier/rectifier

Zhang

Chen

Cheng

et al. 2022

Int J RF Mic Comp-Aid Eng

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This letter proposes a switchable function power amplifier/rectifier using a GaN transistor. A dc single-pole double-throw switch is used to switch between the working mode of the circuit from power amplifier (PA) to rectifier and vice-versa, which greatly reduces the complexity of the circuit. A feedback network with an impedance close to infinity and the input port of the PA always terminated to 50 Ω are utilized to achieve consistent impedance conditions in both PA mode and rectifier mode. Class-F À1 operation is employed to design the PA/rectifier module. For validation, a PA/rectifier operating at 2.4 GHz is designed and fabricated using a CGH40010F GaN transistor. Measurements show that the implemented module can realize efficiency of over 70% regardless of operating in PA mode or in rectifier mode. Meanwhile, the application of the GaN transistor greatly increases the power capacity of the RF-DC rectifier mode, which is promising in bi-directional wireless highpower application scenarios such as enhanced drone airborne capability. To the best of the authors knowledge, this is the first realization of a switchable PA/rectifier module based on a GaN transistor.

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“…They also apply to rectenna design, as it involves non-linear elements similar to those in high-frequency amplifiers. Although previous research has covered rectenna design extensively using load-pull methods [13]- [17], designs employing source-pull techniques are less common. Moreover, previous investigations into the use of source-pull methods for rectenna design have focused on the fundamental frequency alone [18]- [22].…”

Section: Introductionmentioning

confidence: 99%

Efficiency Enhancement of a Single-Diode Rectenna Using Harmonic Control of the Antenna Impedance

KAWAI,

SHINOHARA,

MITANI

2024

IEICE Trans. Electron.

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This study introduces a novel single-diode rectenna, enhancing the rf-dc conversion efficiency using harmonic control of the antenna impedance. We employ source-pull simulations encompassing the fundamental frequency and the harmonics to achieve a highly efficient rectenna. The results of the source-pull simulations delineate the sourceimpedance ranges required for enhanced efficiency at each harmonic. Based on the source-pull simulation results, we designed two inverted-F antenna with input impedances within and without these identified source impedance ranges. Experimental results show that the proposed rectenna has a maximum rf-dc conversion efficiency of 75.9% at the fundamental frequency of 920 MHz, an input power of 10.8 dBm, and a load resistance of 1 kΩ, which is higher than that of the comparative rectenna without harmonic control of the antenna impedance. This study demonstrates that the proposed rectenna achieves high efficiency through the direct connection of the antenna and the single diode, along with harmonic control of the antenna impedance.

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A Highly Efficient Dual-band Harmonic-tuned GaN RF Synchronous Rectifier with Integrated Coupler and Phase Shifter

Cited by 12 publications

References 6 publications

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

Switchable function GaN power amplifier/rectifier

Efficiency Enhancement of a Single-Diode Rectenna Using Harmonic Control of the Antenna Impedance

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