A Highly-Integrated 60 GHz Receiver for Radar Applications in 28 nm Bulk CMOS

Ciocoveanu, Radu; Weigel, Robert; Issakov, Vadim

doi:10.1109/comcas44984.2019.8958434

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…The unlicensed frequency band of approxi-mately 7 GHz centered around 60 GHz has garnered increasing attention for millimeter-wave applications in settings like offices and households [2]. In these scenarios, the design of 60 GHz transmitter and receiver architectures has become a matter of concern [3][4][5][6][7]. Conversely, with the complementary metal-oxidesemiconductor (CMOS) microelectronic technology scaling down to dimensions below 100 nm in integrated memory and chip applications, CMOS circuits are capable of operating at millimeter-wave speeds.…”

Section: Introductionmentioning

confidence: 99%

Design and prototype of a 60 GHz variable gain RF amplifier with 90 nm CMOS for multi-gigabit-rate close proximity point-to-point communications

Öncü

2024

Journal of Electrical Engineering

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This paper presents the implementation of a low-power and variable-gain 60 GHz millimeter-wave CMOS Amplifier designed for short-range multi-gigabit close proximity point-to-point communications. The design uses coplanar wave transmission lines to achieve 50 Ω input and output matching. Realized in a 90 nm CMOS process, the variable-gain VGA exhibits power consumption ranging from 4.7 mW to 39.1 mW, with gains spanning from 5.5 dB to 12.4 dB at 60 GHz and a 3 dB bandwidth exceeding 14.4 GHz. Input and output return losses remain below –10 dB across the gain spectrum. Successful demonstration of gain controllability further validates the circuit’s performance. The compact VGA die, inclusive of pads, has dimensions of 740 μm by 920 μm, thereby occupying a core area of 0.2 mm2. This design demonstrates the potential of low-power, high-performance VGAs in enhancing millimeter-wave communication systems.

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