A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence

Jang, Jun Tae; Min, Jungi; Kim, Donguk; Park, Jingyu; Choi, Sung-Jin; Kim, Dong Myong; Cho, Seongjae; Kim, Dae Hwan

doi:10.1016/j.sse.2020.107764

Cited by 7 publications

(18 citation statements)

References 25 publications

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“…The peroxide reaction can be expressed as in Equation (3), and the evidence that this reaction occurs is explained later through the activation energy. The interface charge becomes relatively positive, which lowers the barrier of SiO cc and increases the conductance of the memristor [ 43 , 59 ]. On the other hand, the E F of the IGZO and the native oxide interface is high during the reset process.…”

Section: Resultsmentioning

confidence: 99%

“…The amount of change (ΔΦ) in the potentiation and retention periods, as compared with the barrier (Φ) at 0 s, is shown in Figure 4 b.

was extracted by fitting ΔΦ obtained in the retention test for each temperature, and the activation energy (0.43 eV) was extracted using the slope in the

vs. 1/kT curve ( Figure 4 c) [ 59 , 60 ]. This was confirmed as the activation energy of the peroxide reaction in previous studies [ 61 , 62 ].…”

Section: Resultsmentioning

confidence: 99%

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Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

et al. 2022

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In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO2/p+-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network.

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Section: Resultsmentioning

confidence: 99%

“…The amount of change (ΔΦ) in the potentiation and retention periods, as compared with the barrier (Φ) at 0 s, is shown in Figure 4 b.

was extracted by fitting ΔΦ obtained in the retention test for each temperature, and the activation energy (0.43 eV) was extracted using the slope in the

vs. 1/kT curve ( Figure 4 c) [ 59 , 60 ]. This was confirmed as the activation energy of the peroxide reaction in previous studies [ 61 , 62 ].…”

Section: Resultsmentioning

confidence: 99%

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

et al. 2022

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“…Memristor can be a building block in neuromorphic systems by controlling conductance [ 7 , 8 , 9 , 10 , 11 , 12 , 13 ]. Various resistive switching behaviors are observed in a lot of materials, such as oxides, nitrides and other materials [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. Among them, the indium gallium zinc oxide (IGZO)-based memristor is very promising for memory applications because of its interface-type switching and good compatibility with conventional Si processing [ 14 , 15 , 16 , 17 , 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content

et al. 2022

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This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the applied bias and oxygen flow rate (OFR) during indium gallium zinc oxide (IGZO) deposition. The short- and long-term components in the potentiation and depression curves are modeled by considering the process (OFR of IGZO) and bias conditions. The compact SPICE model with the physical mechanism of SiO2 modulation is introduced, which can be useful for optimizing the specification of memristor devices.

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“…In order to emulate these memristor applications, various memristor nonlinear drift models using SPICE have been presented before fabricated realization [17][18][19][20][21][22][23][24]. Window functions need to be used to tackle the boundary conditions of the memristors [17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

SPICE Behaviors of Double Memristor Circuits Using Cosine Window Function

Jiang

et al. 2021

Front. Phys.

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In this paper, a Hewlett-Packard (HP) memristor model with a new window function and its versatile characteristics are presented. SPICE behaviors of the linear and nonlinear memristor model are studied through PSpice simulation. High flexibility is demonstrated for emulating the behaviors of the practical HP memristors. Furthermore, the characteristics of the composite SPICE behaviors are both investigated when two memristors are connected in series and in parallel. The polarity of each memristor is also taken into consideration. The relationships among flux, charge, voltage, current, and memristance of the double memristor circuits are simulated and analyzed.

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A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence

Cited by 7 publications

References 25 publications

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content

SPICE Behaviors of Double Memristor Circuits Using Cosine Window Function

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