2021
DOI: 10.1109/ted.2021.3061036
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A Highly Scalable Junctionless FET Leaky Integrate-and-Fire Neuron for Spiking Neural Networks

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Cited by 38 publications
(10 citation statements)
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“…There were a few attempts to construct an artificial neuron by use of a metal–oxide–semiconductor field‐effect transistor (MOSFET) neuron accompanied with supportive circuits by use of CMOS fabrication. [ 34–36 ] They used the impact ionization to create electron–hole pairs. Then the generated holes were accumulated in a floating body of the above MOSFET.…”
Section: Artificial Neuron Devices For a Spiking Neural Networkmentioning
confidence: 99%
“…There were a few attempts to construct an artificial neuron by use of a metal–oxide–semiconductor field‐effect transistor (MOSFET) neuron accompanied with supportive circuits by use of CMOS fabrication. [ 34–36 ] They used the impact ionization to create electron–hole pairs. Then the generated holes were accumulated in a floating body of the above MOSFET.…”
Section: Artificial Neuron Devices For a Spiking Neural Networkmentioning
confidence: 99%
“…Authors in [21] have simulated a low-power-CMOS-based memristive. Recent studies such as in [64][65][66][68][69][70], revolve around innovative methods at the device level, such as bulk FINFET, partially depleted SOI MOSFET, L-shaped gate bipolar impact ionization MOS, double-gate junctionless FET, Ge-MOSFET, and multi-domain spintronic device for attaining lower E/spike metric for the LIF neurons. Our work conveys energy efficiency from the architectural, circuit, and algorithmic levels.…”
Section: System-level Comparison Between Digital and Mixed Scheme (Ds...mentioning
confidence: 99%
“…Consequently, neural devices with spike-generating capabilities have been studied. [10][11][12][13][14][15][16] Specifically, neuron circuits that leverage floating body effects in a silicon-on-insulator FET (SOI-FET), which is used for both membrane capacitor and comparator functions, can reduce both the spike generation power and circuit footprint. [17][18][19] Recently, single-device SOI-FETs achieving LIF behavior have been explored.…”
Section: Introductionmentioning
confidence: 99%