A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure

Zulkifli, Nur Adnin Akmar; Park, Kwang-Wook; Min, Jung‐Wook; Ooi, Boon S.; Zakaria, Rozalina; Kim, Jongmin

doi:10.1063/5.0018076

Cited by 26 publications

(16 citation statements)

References 40 publications

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“…[7][8][9][10][11][12][13] The range of radiation to which GaN is sensitive is extensive 14 and recently GaN has been used to develop self-powered UV and X-ray detectors. [15][16][17][18] Development of growth techniques for GaN also led to fabrication of high quality 1D structures, such as nano-and microwires. 19,20 This mitigates the issue of poor quality GaN films caused by lattice mismatch with the typical growth substrates to a great extent as in the case of nano-and microwires the dislocations are bent to the sidewall surface very close to the bottom, making them essentially dislocation free.…”

mentioning

confidence: 99%

Self-powered proton detectors based on GaN core–shell p–n microwires

Verheij

Peres²,

Cardoso

et al. 2021

Applied Physics Letters

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Self-powered particle detectors have the potential to offer exceptional flexibility and compactness in applications where size limits and low power consumption are key requisites. Here, we report on the fabrication and characterization of radiation sensors based on GaN core/shell p–n junction microwires working without externally applied bias. With their small size, high resistance to radiation, and high crystalline quality, GaN microwires constitute highly interesting building blocks for radiation-hard devices. Through microfabrication steps, single-wire devices were processed that show a leakage current as low as 1 pA in reverse bias. Irradiation with both UV light and 2 MeV protons results in photo/ionocurrent signals several orders of magnitude above the dark current and response times below 30 ms. The sensor also showed a good resistance to radiation. Although we observed a small increase in the leakage current after a prolonged proton irradiation, the measured transient ionocurrent signal remains stable during irradiation with a total proton fluence of at least 1×1016 protons/cm2.

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mentioning

confidence: 99%

Self-powered proton detectors based on GaN core–shell p–n microwires

Verheij

Peres²,

Cardoso

et al. 2021

Applied Physics Letters

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“…The growth parameters can be accurately controlled via in situ monitoring capability. Although the growth rate in MBE is low, it has proven very successful in the growth of optoelectronic device structures [ 99 , 100 ].…”

Section: Synthesis Methods For (In)gan Nanostructuresmentioning

confidence: 99%

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Soopy

Tang

et al. 2021

Nanomaterials

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This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

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“…The epitaxy caused by a 2-D material, termed van der Waals epitaxy (vdWE), reduces the dislocation density of the grown material, which strongly affects the device properties, and also allows exfoliation of the grown material from the substrate owing to the weak chemical bond. [1][2][3][4] The advantages of vdWE have been conrmed using various structures, such as gallium nitride (GaN) or aluminium nitride (AlN) growth on graphene/silicon carbide (SiC), 5 graphene/ silicon dioxide (SiO 2 ), [6][7][8][9] graphene/silicon (Si), [10][11][12] graphene/ sapphire (Al 2 O 3 ), [13][14][15][16][17][18] and hexagonal boron nitride (h-BN)/ Al 2 O 3 . 19,20 However, the remaining dislocation density on vdWE is still a hurdle to achieving high-quality semiconductors.…”

Section: Introductionmentioning

confidence: 99%