A highly sensitive rare earth erbium doped In2S3 thin films for photodetection applications

Altowyan, Abeer S.; Hakami, Jabir; Algarni, H.; Shkir, Mohd.

doi:10.1016/j.inoche.2023.110738

Cited by 12 publications

(1 citation statement)

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“…Terbium doping of In 2 S 3 has improved the luminous characteristics and longevity, which are accounted for in field emission devices. Recently, photosensing ability of the In 2 S 3 thin films were improved using rare earth elements such as Ce, Er, La, Y, Sm, etc [14][15][16][17][18]. In the present work, Terbium (Tb) was chosen as effective dopant material to In 2 S 3 due to their close atomic proximity to In [10].…”

Section: Introductionmentioning

confidence: 99%

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Alkallas,

Ben Gouider Trabelsi,

Shkir

et al. 2023

Phys. Scr.

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In the present work, undoped In2S3 and varying concentrations of Tb (1, 2, 3, 4 & 5 wt%) doped In2S3 thin films were synthesized using the economical and nebulizer spray pyrolysis technique for studying their photosensing characteristics at room temperature. X-ray diffractometer (XRD) studies showed the diffraction pattern of the thin films exhibits a cubic- β phase of In2S3 and the highest crystallite size of 61 nm was observed for the In2S3: Tb (2wt%) thin film. The morphological & elemental analysis showed that all the synthesized thin films exhibit homogeneous non-uniform crystal morphology with the existence of S, In, Tb compounds with their distinct composition. From Ultraviolet-Visible(UV–vis) studies, all the prepared thin films exhibit maximum absorption in the UV region with a minimum bandgap of 2.85 eV for the In2S3:Tb (2wt%) thin film. Also, the Photoluminescence (PL) spectra showed that the In2S3:Tb (2wt%) thin film possesses two large intense emission peaks around ∼470 nm (Yellow) and 530 nm (green). Finally, the photo sensing studies showed that the fabricated In2S3:Tb (2wt%) thin film photodetector showed better photocurrent, Responsivity (R), Detectivity (D*), External Quantum Efficiency (EQE), Response/Recovery time values of ∼12.5 μA, 0.296 AW−1, 7.75 × 1010 Jones, 60%, 2.9/3.6 s, respectively indicating the device better suitable for commercial photodetector application.

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Section: Introductionmentioning

confidence: 99%

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Alkallas,

Ben Gouider Trabelsi,

Shkir

et al. 2023

Phys. Scr.

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Fabrication and characterization of self-powered SnO2/CdTe1-xSex/CdTe photodetectors

Yılmaz,

Başol,

Polat

et al. 2024

J Mater Sci: Mater Electron

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Performance evaluation of SILAR deposited Rb-Doped ZnO thin films for photodetector applications

Tekin,

Unveroglu Abdioglu,

Karaduman Er

et al. 2024

J Sol-Gel Sci Technol

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ZnO-based photodetectors (PDs) compose a remarkable optoelectronic device field due to their high optical transmittance, electrical conductivity, wide band gap, and high binding energy. This study examined the visible light photodetector performance of the pristine and Rubidium (Rb)-doped ZnO thin films. The influence of Rb doping amount (2, 4, and 6 wt% in solution) on the electrical, optical, and structural properties of the ZnO-based thin films produced by the Successive Ion Layer Adsorption and Reaction (SILAR) technique was analyzed. Structural analyses showed that all peaks correspond to hexagonal wurtzite structure with no other peak from Rb-based phases, suggesting the high quality of the crystalline pristine and Rb-doped ZnO thin films. The morphology of the thin films shows homogenous layers formed of nanoparticles where particle size was first decreased and then increased with the increasing Rb doping according to Scanning Electron Microscope (SEM) morphology analysis. Besides that, Raman spectroscopy analyses indicate that the phonon lifetimes of the ZnO-based thin films slightly increased due to the improvement of the crystal quality with the increasing amount of Rb in the SILAR solution. Photosensor measurements of the nanostructured pristine and Rb-doped ZnO thin films were measured at different light power intensities under the visible light environment. Photosensor properties were examined depending on the doping amount and light power density. In light of the literature review, our study is the first to produce Rb-doped ZnO thin films via the SILAR method, which has a promising potential for photosensor applications. Graphical Abstract

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A highly sensitive rare earth erbium doped In2S3 thin films for photodetection applications

Cited by 12 publications

References 62 publications

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Fabrication and characterization of self-powered SnO2/CdTe1-xSex/CdTe photodetectors

Performance evaluation of SILAR deposited Rb-Doped ZnO thin films for photodetector applications

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A highly sensitive rare earth erbium doped In2S3 thin films for photodetection applications

Cited by 12 publications

References 62 publications

Improved photo sensing behavior of the terbium doped In2S3 thin films synthesized by spray pyrolysis technique

Improved photo sensing behavior of the terbium doped In2S3 thin films synthesized by spray pyrolysis technique

Fabrication and characterization of self-powered SnO2/CdTe1-xSex/CdTe photodetectors

Performance evaluation of SILAR deposited Rb-Doped ZnO thin films for photodetector applications

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Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique