A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors With Improved Performance

Deng, Xiaochuan; Cheng, Zhijie; Chen, Zhiyu; Wu, Hao; Bai, Song; Li, Xu; Chen, Wanjun; Zhang, Chao

doi:10.1109/ted.2022.3183555

Cited by 6 publications

(3 citation statements)

References 25 publications

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“…The thickness of the gate oxide is 50 nm. The channel length is 0.5 µm [28,29]. The channel mobility is set to be 30 cm 2 /V-s [29,30].…”

Section: Von-eox-m Trade-off In Sic Planar-gate Igbtmentioning

confidence: 99%

“…The channel length is 0.5 µm [28,29]. The channel mobility is set to be 30 cm 2 /V-s [29,30]. The doping concentration and depth of the p-body are 1×10 17 cm −3 and 0.8 µm, respectively.…”

Section: Von-eox-m Trade-off In Sic Planar-gate Igbtmentioning

confidence: 99%

“…The device area is fixed at 1 cm 2 by adjusting the respective area factor for each design accordingly. The carrier lifetime is set as 2 µs [29,31]. The n-buffer layer thickness and doping concentration are 10 µm and 4×10 17 cm −3 respectively.…”

Section: Von-eox-m Trade-off In Sic Planar-gate Igbtmentioning

confidence: 99%

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Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

Zhang

et al. 2023

IEEE J. Electron Devices Soc.

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In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state. With p-bodies placed closer, the gate oxide field is reduced, but the conductivity modulation is suppressed. In this work, a new SiC planar IGBT with oxide shield is proposed and studied by TCAD simulations. The proposed SiC IGBT achieves improved trade-off between on-state voltage drop (VON) and maximum gate oxide electric field (Eox-m). When a quite larger distance between neighboring p-bodies is adopted in the proposed SiC IGBT, a low VON is obtained, while the Eox-m can be kept at a small value with the oxide shielding structures protecting the gate oxide. Switching characteristics are also studied, and the proposed SiC-IGBT delivers much better trade-off between turn-off energy loss (EOFF) and VON than the conventional SiC planar IGBT.Index Terms-SiC IGBT, oxide shield, on-state voltage drop, maximum gate oxide electric field, turn-off energy loss. I. INTRODUCTIONUE to the superior properties of silicon carbide (SiC), such as wide bandgap, large critical electric field, and high temperature endurance, SiC based devices are widely studied for high-power and high-temperature applications [1][2][3][4][5][6]. For

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“…The thickness of the gate oxide is 50 nm. The channel length is 0.5 µm [28,29]. The channel mobility is set to be 30 cm 2 /V-s [29,30].…”

Section: Von-eox-m Trade-off In Sic Planar-gate Igbtmentioning

confidence: 99%

Section: Von-eox-m Trade-off In Sic Planar-gate Igbtmentioning

confidence: 99%

See 1 more Smart Citation

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

Zhang

et al. 2023

IEEE J. Electron Devices Soc.

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Coordinated control strategies for unbalanced voltage suppression and optimization of SOC of battery in a bipolar DC microgrid with voltage balancer

Tan

Liao²,

Li³

et al. 2022

Energy Reports

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A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA

Wu,

Yang,

Yang

et al. 2024

Microelectronics Journal

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A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors With Improved Performance

Cited by 6 publications

References 25 publications

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

Coordinated control strategies for unbalanced voltage suppression and optimization of SOC of battery in a bipolar DC microgrid with voltage balancer

A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA

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