A hybrid ferroelectric-flash memory cells

Abstract

A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V−1 s−1 of field-effect mobility, 190 mV dec−1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to −5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

“…25,26 Therefore, we study high-temperature TER of FTJ devices in the present work from 300 to 513 K. The MFS-type Pt/BTO/Nb:SrTiO 3 FTJs are adopted due to their giant TER at room temperature. A R OFF /R ON ratio as high as $3 Â 10 5 , close to that of Flash memories, 27,28 can be maintained up to 383 K, exceeding the typical operation temperature ($358 K) of integrated circuits. 19 Temperature-dependent TER behaviors of the Pt/BTO/ Nb:SrTiO 3 are investigated considering electron transport with an evolving interfacial Schottky barrier and a decreasing polarization in the 4 u.c.-thick BTO barrier as temperature increases.…”

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

“…This is different from previously reported MFS-type FTJs 24 , where the interface Schottky barrier works together with the ferroelectric barrier. This polarization-modulation produces a more efficient control on the tunnelling transport through the device and generates the giant ON/OFF ratio comparable to commercial Flash memories 26 27 28 29 .…”

Flexible Organic Tribotronic Transistor Memory for a Visible and Wearable Touch Monitoring System

“…After another touch on the OTTM in the resetting mode, the transfer curve returned to the left to achieve the erasing process. It is noteworthy that the writing and erasing time of the OTM by electrical voltages can be as short as 5 ms (Figure S3, Supporting Information), which is favorable for applications in flash memories . It indicates that the OTTM has potential to be written and erased by instantaneous mechanical pulses, and the external touch in the experiment as quick as hundreds of milliseconds is enough long for practical applications of the OTTM (Figure S2, Supporting Information).…”