2022
DOI: 10.1039/d2dt02904a
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A hybrid GaN/Ga2O3 structure anchored on carbon cloth as a high-performance electrode of supercapacitors

Abstract: A hybrid structure of GaN/Ga2O3 microrods was fabricated on carbon cloth (CC) using a hydrothermal process combined with a high-temperature nitridation followed by an air annealing process. By elevating the...

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Cited by 3 publications
(2 citation statements)
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“…The N 1s region shows a Ga–N peak at 397.5 eV , with an atomic ratio of 66% at 50 ppm that increased to 87.2% at the highest NH 4 OH concentration, as reported in Table . When the experiment was performed in the absence of CO 2 bubbling, this ratio was consistent at 83.1%.…”
Section: Resultsmentioning
confidence: 62%
See 1 more Smart Citation
“…The N 1s region shows a Ga–N peak at 397.5 eV , with an atomic ratio of 66% at 50 ppm that increased to 87.2% at the highest NH 4 OH concentration, as reported in Table . When the experiment was performed in the absence of CO 2 bubbling, this ratio was consistent at 83.1%.…”
Section: Resultsmentioning
confidence: 62%
“…It should be noted that Ga Auger peaks were detected at 394 eV in all samples. 63,64 The O 1s region in Figure S5 shows Ga−OH peaks in the 531.5−532.3 eV 64 range relevant to an oxygen-deficient GaOOH phase, where the atomic ratio increases at higher NH 4 OH compared to the lattice oxygen Ga−O peak of Ga 2 O 3 at 530.5 eV. 61 This result suggests that the incorporation of N decreases the level of oxidation of GaOOH to Ga 2 O 3 .…”
Section: ■ Results and Discussionmentioning
confidence: 99%