2023
DOI: 10.1002/adfm.202212173
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A Hybrid Magneto‐Optic Capacitive Memory with Picosecond Writing Time

Abstract: The long-term future of information storage requires the use of sustainable nanomaterials in architectures operating at high frequencies. Interfaces can play a key role in this pursuit via emergent functionalities that break out from conventional operation methods. Here, spin-filtering effects and photocurrents are combined at metal-molecular-oxide junctions in a hybrid magnetocapacitive memory. Light exposure of metal-fullerene-metal oxide devices results in spin-polarized charge trapping and the formation of… Show more

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Cited by 6 publications
(3 citation statements)
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“…In recent years, research of low-dimensional materials in fields such as light, electricity, and magnetism has received continued attention. The increasing amount of data requires high-density, high-speed, and high-stability memristors for calculation and simulation, as traditional dynamic random-access memory (DRAM) and flash memory cannot meet these requirements well. Therefore, it is urgent to develop a high-performance memristor. Te compound-based memory has developed since the past century, most of them are based on phase transitions of binary or ternary compounds such as GeTe, GeSbTe, GeSeTe, etc., while few reports focus on pure Te-based memory.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, research of low-dimensional materials in fields such as light, electricity, and magnetism has received continued attention. The increasing amount of data requires high-density, high-speed, and high-stability memristors for calculation and simulation, as traditional dynamic random-access memory (DRAM) and flash memory cannot meet these requirements well. Therefore, it is urgent to develop a high-performance memristor. Te compound-based memory has developed since the past century, most of them are based on phase transitions of binary or ternary compounds such as GeTe, GeSbTe, GeSeTe, etc., while few reports focus on pure Te-based memory.…”
Section: Introductionmentioning
confidence: 99%
“…Given that such materials could revolutionise the world of data storage and molecular electronics in general, this represents an exciting challenge for photo-chemists and physicists. [1][2][3][4][5][6]…”
Section: Introductionmentioning
confidence: 99%
“…It also highlights some of the challenges that lie ahead in the development of ultrafast photoactive magnetic materials. Given that such materials could revolutionise the world of data storage and molecular electronics in general, this represents an exciting challenge for photo‐chemists and physicists [1–6] …”
Section: Introductionmentioning
confidence: 99%