“…In recent years, research of low-dimensional materials in fields such as light, electricity, and magnetism has received continued attention. − The increasing amount of data requires high-density, high-speed, and high-stability memristors for calculation and simulation, − as traditional dynamic random-access memory (DRAM) and flash memory cannot meet these requirements well. − Therefore, it is urgent to develop a high-performance memristor. Te compound-based memory has developed since the past century, most of them are based on phase transitions of binary or ternary compounds such as GeTe, GeSbTe, GeSeTe, etc., − while few reports focus on pure Te-based memory.…”