A <i>p</i>-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Shan, Rong; Ouardi, Siham; Fecher, Gerhard H.; Gao, Li; Kellock, A. J.; Gloskovskii, A.; ViolBarbosa, Carlos E.; Ikenaga, Eiji; Felser, Claudia; Parkin, Stuart S. P.

doi:10.1063/1.4764520

Cited by 12 publications

(7 citation statements)

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“…In zero field, ρ xx decreases in a metallic manner with the decrease of temperature, and a low residual resistivity of ρ xx (2K) = 0.082 mΩcm is obtained. This value is in the same order with that of YbPtBi, 25 but much lower than that of most reported half-Heusler compounds, such as YPtBi, 8 LuPdBi, 6 LuPtSb, 15,20 YNiBi, 26 and YPtSb, 27 implying a high sample quality. With the further decrease of temperature, ScPtBi single crystal shows no superconducting transition even at temperature down to 0.3K, which further confirms that there are no nano-scale bismuth inclusions trapped inside crystals.…”

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confidence: 46%

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

Hou

Wang

Liu

et al. 2015

Applied Physics Letters

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High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2K in a magnetic field of 1T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm 2 V -1 s -1 at 2K -2016 cm 2 V -1 s -1 at 300K).These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors, but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.Recently, searching for new materials with semimetallic features in electronic structure protected by the interplay of symmetry and topology has attracted increasing attention, following the observation of large non-saturation magnetoresistance (MR) in a variety of nonmagnetic semimetals such as Cd 3 As 2 , 1 TaAs, 2 NbP, 3 and WTe 2 . 4 Electronic transport in heavy half-Heusler compounds is distinguished from others by the fact that the strong spin-orbit coupling (SOC) induces many fascinating phenomena, such as the heavy fermion behavior, 5 noncentersymetry superconductors, 6-8 possible topological insulators, 9-13 large positive MR, [14][15][16] and extremely high mobility, 17 which are of great significance to the applied physics field.According to band structure calculations, half-Heusler ScPtBi is predicted to show similar band inversion to that of HgTe. 9, 10, 13 Its topological properties can be created by applying strain or designing an appropriate quantum well structure. 9 Moreover, this material possesses nearly linear dispersion relation of bulk band along with zero gap, 13 which is usually associated with large MR effect and high mobility behavior. [1][2][3][4]14,15,17,18 Although the growth of many heavy half-Heusler compounds (such as LuPdBi, 6,16, 19 LuPtBi, 7 LuPtSb,15,20,21 and YPtBi 8 ) have been previously reported, the synthesis of ScPtBi (no matter polycrystal or single crystal) is unsuccessful thus far since this compound is proposed to show a weaker thermodynamic stability. 22,23 In this work, we report on the growth and magneto-transport properties of high-quality nonmagnetic ScPtBi single crystal. Intriguingly, the metal-semiconductor transition coexists with the weak antilocalization (WAL) effect in this material, which results in a large low-field positive MR (240% at 2K -150% at 100K) in a magnetic field of 1T.Single crystals of ScPtBi were synthesized by using excess Bi as the flux in a molar ratio of Sc:Pt: Bi = 1:1:10. The starting materials were mixed together and placed in an alumina crucible with the one having higher melting temperatures on the bottom. This process was handle...

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confidence: 46%

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

Hou

Wang

Liu

et al. 2015

Applied Physics Letters

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“…d states (A and B) with small binding energies have a higher intensity for s polarisation. As in other cubic Heusler compounds [26,64,65], the intensity of the a 1 states is suppressed by s polarisation, but it does not vanish, as expected for angular asymmetry parameter β 0 = 2 [66]. This is due to the sp-hybridisation of the states in the cubic symmetry.…”

Section: Haxpes Of the Valence Bandmentioning

confidence: 62%

Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Ouardi¹,

Fecher²,

Kubota³

et al. 2015

J. Phys. D: Appl. Phys.

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Abstract.Using circularly polarised radiation and a combination of bulk-sensitive hard X-ray photoelectron spectroscopy and X-ray-absorption spectroscopy (XAS) we studied the electronic and magnetic structure of epitaxial Mn 1.8 Co 1.2 Ga thin films. Spin resolved Bloch spectral functions, density of states as well as charge and magnetisation densities were investigated by a first-principles analysis of full potential, fully relativistic Korringa-Kohn-Rostoker calculations of the electronic structure. The valence states were experimentally investigated by using linear dichroism in the angular distribution and comparing the results to spin-resolved densities of states. The linear dichroism in the valence band enabled a symmetry analysis of the contributing states. The spectra were in good agreement with the theoretical partial density of states. The element-specific, spin-resolved, unoccupied densities of states for Co and Mn were analysed by using XAS and X-ray magnetic circular dichroism (XMCD) at the L 3,2 edges. The spectra were influenced by strong correlation effects. XMCD was used to extract the site resolved magnetic moments. The experimental values of m Mn = 0.7 µ B and m Co = 1.05 µ B agree very well with the calculated magnetic moments. Magnetic circular dichroism in angle-resolved photoelectron spectroscopy at the Mn and Co 2p core level exhibited a pronounced magnetic dichroism and confirmed the localised character of the Mn d valence states.

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“…The shape of the small pieces was fixed as a sector so that the depo- showed that the YPtSb thin films were p-type conductors with a high carrier density on the order of 10 20 − 10 21 cm −3 , which corresponded to the weak semiconducting behavior indicated by the resistivity curves. The weak temperature dependence of resistivity has also been observed in bulk YPtSb and other half-Heusler semiconductors [16], a trend markedly different from that in the case of conventional semiconductor materials such as Si. [10,[17][18][19] As seen in Fig.…”

Section: Resultsmentioning

confidence: 90%

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

Shan

Vilanova

Qin

et al. 2012

Physica Rapid Research Ltrs

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The semiconducting half-Heusler compound YPtSb has been predicted to convert into a topological insulator under the application of an appropriate degree of strain. In this study, p-type semiconducting YPtSb thin films were prepared by magnetron co-sputtering, using a specially designed target. YPtSb thin films grown on MgO (100) substrates at 600 • C showed a textured structure with the (111) plane parallel to the (001) plane of MgO. Electrical measurements showed that the resistivity of the YPtSb films decreases with increasing temperature, indicating semiconductor-like behavior. The carrier density was as high as 1.15×10 21 cm −3 at 300 K. The band gap of the YPtSb thin films was around 0.1-0.15 eV, which was in good agreement with the theoretical prediction and the value measured for bulk YPtSb.PACS numbers:

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A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Cited by 12 publications

References 13 publications

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

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A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Cited by 12 publications

References 13 publications

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

Magnetic dichroism study on Mn1.8Co1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

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Magnetic dichroism study on Mn_1.8Co_1.2Ga thin film using a combination of x-ray absorption and photoemission spectroscopy