A Junctionless Nanowire Transistor With a Dual-Material Gate

Lou, Haijun; Zhang, Lining; Zhu, Yanming; Lin, Xinnan; Yang, Shengqi; He, Jin; Chan, Mansun

doi:10.1109/ted.2012.2192499

Cited by 150 publications

(28 citation statements)

References 32 publications

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“…The channel thickness and width are respectively 10 nm and 20 nm, and the gate length is 1 m. A doping concentration of 210 17 is applied uniformly throughout the source, drain, and channel. SiO2 was chosen as a material for both gate oxide and buried oxide layers.…”

Section: Device Structurementioning

confidence: 99%

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Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor

Kumar¹,

Pravin²

2021

J. Nano- Electron. Phys.

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This paper focuses on the effects occurring due to the inclusion of multi-channel titanium nitride (TiN) material in a dual metal gate (DMG) junctionless (JL) thin film transistor. Two nanosheets have been implemented in a JL tri-gate transistor, which is separated by the gate oxide layer and surrounded by the gate layer. The thickness of TiN material placed in between the gate oxide and gate layer helps in tuning the work function of the gate. The comparison has been done between single channel with single metal gate, double channel with single metal gate, double channel with DMG and double channel with DMG and TiN. Strains have been created in the devices by implementing TiN and DMG. An improvement of 31 % in the output current has been obtained using DMG double channel device when compared with single gate single channel device. The comparison has been carried out in Sentaurus technology computer aided design (TCAD). The drift diffusion model, the mobility model, which includes the effects of doping concentration and electric field, the bandgap narrowing model and the Shockley-Read-Hall recombination model have been used to calculate outputs. The proposed structure acquires higher transconductance values than normal tri-gate devices. It has been verified that when varying the TiN thickness, the potential has been tuned. Due to the tuning of the work function, the performance of the device has been improved.

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Section: Device Structurementioning

confidence: 99%

“…Single metal gate was replaced by DMG, and the work functions for metal 1 and metal 2 were 4.8 eV (gold) and 4.33 eV (titanium), respectively, considering the values from [16]. The length for both metals was 500 nm [17]. The incorporation of TiN material in between the gate and HfO2 layer [11] is also represented in Fig.…”

Section: Device Structurementioning

confidence: 99%

Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor

Kumar¹,

Pravin²

2021

J. Nano- Electron. Phys.

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“…In literature, dual-material gate devices have been widely studied and fabricated [7], [16], [18]- [20]. To realize a DMG architecture, techniques such as tilt angle evaporation and lithography, metal inter-diffusion technique and metal wet etching techniques can be used [18], [21], [22]. In the tilt angle evaporation method, one of the gate material is evaporated with a carefully controlled tilt angle, and then the other material is deposited using conventional evaporation [20].…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

Garg

Saurabh

2020

IEEE Open J. Nanotechnol.

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In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction. The within-channel BTBT is enabled by sharp bandbending induced by the dual material gate (DMG). The workfunctions of two metal gates are chosen, such that the surface potential profile exhibits a distinct step at the DMG interface. Consequently, even under equilibrium condition, a high lateral electric field and an abrupt tunneling junction exist at the DMG interface. When a small gate voltage is applied, the inherent lateral electric field aids in creating an abrupt band alignment and obtaining a small tunneling width. As a result, an excellent average subthreshold swing is obtained in the proposed device. We have also investigated scaling of channel lengths in the proposed device and have demonstrated that within-channel tunneling can be exploited for channel lengths of 40nm and above. Furthermore, low drain threshold voltage and suppressed drain-induced barrier lowering can be obtained in the proposed device. Moreover, in contrast to conventional TFETs, electrical characteristics of the proposed device are less susceptible to source doping variations and shift in gate-edge with respect to the source-channel junction. Index Terms-Tunnel field-effect transistor, dual material gate, subthreshold swing, threshold voltage, lateral electric field, process-induced variations.

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“…Due to the increasing development of electronic equipment and being the incessant scaling down of device sizes, semiconductor devices are very close to their physical limits, there is an instantaneous need to develop next-generation technologies, in the designation of both device architecture and physics [1][2]. With the technology of getting smaller which confronts Moore's law i.e., the transistor poll on a chip multiplies at the rate of 2X per every 2 years [3], so nano electronic researchers are greatly keen on studying distinctive nanodevices like carbon nanotube/graphene tunnel field-effect transistors (FETs) and sensors [4][5][6][7][8], organic FETs [9][10], single-molecule devices [11][12], single-electron transistors (SETs) [13][14] and junction-less nanowire transistors [15][16].…”

Section: Introductionmentioning

confidence: 99%

First Principal Simulation Study of Human Body Compatible Molecular Single Electron Transistors

Bodaghzadeh

Ahmadi

et al. 2021

IEEE Access

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Considering the importance of single-electron transistors (SETs), many studies have been done over the past decade to develop the use of SETs and improve their efficiency in both the experimental and theoretical fields. One of the most important challenges in SETs study is their optimization for use in humancompatible Nanobots for purposes such as drug delivery and destruction of cancer cells. Therefore, the use of human-compatible molecules as an island in these transistors is very significant. In this work, the density functional theory (DFT) & non-equilibrium Green's function (NEGF) methods have been used for SETs modeling study of the first principle computations in the coulomb barricade system of SETs based upon the metal-organic complex of ascorbic acid (vitamin C), thiamine (vitamin B1), riboflavin (vitamin B2), nicotinic acid (vitamin B3), pantothenic acid (vitamin B5), pyridoxine (vitamin B6), biotin (vitamin B7) and folic acid (vitamin B9). The isolated molecules and SET structures are analyzed based upon premises of overall energies, ionization energies, affection energies, addition energies, charging energies, gate coupling constant, density of states (DOS) plot, and charge stability diagrams (CSDs). It's established that riboflavin (vitamin B2) in the habitat of SET a decline in the additional energy and has the lowest addition energy and lowest charging energy at the neutral charge in the SET environment along with higher conductivity as evident from the CSD comparison has been revealed. Summing up the results and analyses indicate that a riboflavin molecule is a suitable option for SETs with a molecular island compatible with the human body.

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A Junctionless Nanowire Transistor With a Dual-Material Gate

Cited by 150 publications

References 32 publications

Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor

Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

First Principal Simulation Study of Human Body Compatible Molecular Single Electron Transistors

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