A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications

Camarchia, Vittorio; Guerrieri, Simona Donati; Ghione, Giovanni; Pirola, Marco; Quaglia, Roberto; Rubio, Jorge Julián Moreno; Loran, Brian; Palomba, F.; Sivverini, Giuseppe

doi:10.1109/inmmic.2014.6815084

Cited by 13 publications

(5 citation statements)

References 11 publications

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“…The foreseen transition to 6G communication systems (and beyond) calls for increased operation frequency and bandwidth along with reduced power dissipation and high efficiency, opening the way to the exploitation of new technologies and devices. Both Si nanotechnologies (e.g., CMOS and FinFETs [1][2][3][4]) and III-V-based technologies (GaAs and GaN PHEMTs [5][6][7]) have been continuously optimized for RF/microwave applications to cover the requirements of next generation communication systems, targeting either higher power density for the deployment of the wireless backbone [8], or extremely high operating frequencies to exploit their inherent wideband capability, or both. In analog high-frequency applications, though, the technological quality turns out to be the key for a successful deployment of microwave stages such as power amplifiers (PAs) or mixers [9].…”

Section: Introductionmentioning

confidence: 99%

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

et al. 2022

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Process-induced variability is a growing concern in the design of analog circuits, and in particular for monolithic microwave integrated circuits (MMICs) targeting the 5G and 6G communication systems. The RF and microwave (MW) technologies developed for the deployment of these communication systems exploit devices whose dimension is now well below 100 nm, featuring an increasing variability due to the fabrication process tolerances and the inherent statistical behavior of matter at the nanoscale. In this scenario, variability analysis must be incorporated into circuit design and optimization, with ad hoc models retaining a direct link to the fabrication process and addressing typical MMIC nonlinear applications like power amplification and frequency mixing. This paper presents a flexible procedure to extract black-box models from accurate physics-based simulations, namely TCAD analysis of the active devices and EM simulations for the passive structures, incorporating the dependence on the most relevant fabrication process parameters. We discuss several approaches to extract these models and compare them to highlight their features, both in terms of accuracy and of ease of extraction. We detail how these models can be implemented into EDA tools typically used for RF and MMIC design, allowing for fast and accurate statistical and yield analysis. We demonstrate the proposed approaches extracting the black-box models for the building blocks of a power amplifier in a GaAs technology for X-band applications.

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Section: Introductionmentioning

confidence: 99%

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

et al. 2022

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“…GaAs MMIC is regarded as the premier power device for the microwave communication system [1] and phase array radar system [2] witnessed in recent decades. However, when facing high peak-to-average ratio (PAR) modulation schemes such as QPSK and OFDM, the nonlinearity of the power amplifier causes spectral reproduction and intermodulation distortion.…”

Section: Introductionmentioning

confidence: 99%

A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

et al. 2019

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This paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 μm GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analyzed and verified. The three-stage MMIC operating at 20–22 GHz obtained an improved third-order intermodulation ratio (IM3) of 20 dBc at a 27 dBm per carrier output power while demonstrating higher than a 27 dB small signal gain and 1-dB compression point output power of 30 dBm with 33% power added efficiency (PAE). The chip dimension was 2.00 mm × 1.40 mm.

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“…To enhance the back-off efficiency, Doherty power amplifier (DPA) has been regarded as the most popular approach due to its significant efficiency enhancement and straightforward hardware implementation [1][2][3][4][5][6][7][8]. By actuating proper load modulation, these DPAs can maintain high efficiency at 6 dB or more back-off powers.…”

Section: Introductionmentioning

confidence: 99%

A Wideband Doherty Power Amplifier With Shunted Reactive Load for Efficiency Enhancement

Kong¹,

Xia²,

Ding³

et al. 2017

PIER C

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Abstract-A highly efficient Doherty power amplifier (DPA) using shunted reactive load is designed to achieve wideband operation. For enhanced back-off efficiency over the whole bandwidth, a modified load modulation network (LMN), which employs a shunted reactive load at the combining point, was firstly designed to enlarge the effective load impedance of the carrier amplifier at low and high frequencies. Then, the two-point matching approach was employed to design the carrier and peaking output matching networks, which can eliminate the use of offset lines and simplify the LMN. Measurement results show that the designed DPA can deliver an efficiency of 48%-61% at 6 dB back-off power over the frequency band of 2.2-2.9 GHz. For a 20 MHz LTE modulated signal, an average efficiency of higher than 55% can be achieved at an average output power of 37 dBm, while the adjacent channel leakage ratio is below −49 dBc after linearization.

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A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications

Cited by 13 publications

References 11 publications

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

A Wideband Doherty Power Amplifier With Shunted Reactive Load for Efficiency Enhancement

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