A k·p model of InAs/GaSb type II superlattice infrared detectors

Klipstein, P. C.; Livneh, Y.; Klin, O.; Grossman, Steven H.; Snapi, N.; Glozman, A.; Weiss, Eliezer

doi:10.1016/j.infrared.2012.12.009

Cited by 28 publications

(16 citation statements)

References 21 publications

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“…Our values differ from some of those used by other workers, and are based on a fit to bulk band gap and conduction band mass data from the same database sources. 37 The fitting procedure uses a bulk five-band k · p model, as discussed in Appendix C, and gives values which are very close to those quoted by Lawaetz. 29 Table II in Appendix B lists our E P values, and the values of all the parameters taken from literature databases.…”

Section: Resultssupporting

confidence: 65%

“…29 For the direct band-gap materials, they are within a few percent of the values that we have determined experimentally using a five-level k · p treatment 50,51 and spectroscopic data. 37 Although we use the latter in our model (see Table II), we consider the Lawaetz values to be very close to ours and so use his values here without modification, in order to be more consistent in our comparison with his Luttinger parameters.…”

Section: Appendix C: Constraints On the Luttinger Parameters For Nearmentioning

confidence: 87%

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k·pmodel for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices

et al. 2012

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We have fitted the k · p model derived recently by one of the authors [Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured photoabsorption spectra at 77 and 300 K for representative InAs/GaSb superlattices with band-gap wavelengths between 4.3 and 10.5 μm. The model is able to reproduce the main features of the absorption spectra, including a strong peak from the zone boundary HH 2 → E 1 transition. We have also used the same model to predict the band-gap wavelengths of over 30 more superlattices, measured by photoluminescence spectroscopy. The maximum error is 0.6 μm, which corresponds to an uncertainty of less than 0.4 ML in layer width. This is comparable with the experimental uncertainty in layer widths, determined by in situ beam-flux measurements in the growth reactor. By eliminating all terms from the Hamiltonian, the energy contribution of which is less than the error due to the uncertainty in layer widths, the number of unknown fitting parameters has been reduced to six: two Luttinger parameters, three interface parameters, and the valence band offset. The remaining four Luttinger parameters are not independent and are determined from the two independent ones. Our set of Luttinger parameters is close to that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum deviation in any parameter of 0.6. The interface parameters are diagonal and have values of D S = 3 eVÅ, D X = 1.3 eVÅ, and D Z = 1.1 eVÅ at 77 K. The off-diagonal interface parameters α and β are too small to be fitted with any accuracy and have negligible effect on the unpolarized photoabsorption spectra. We also propose values for the room-temperature Luttinger and interface parameters. The fitted unstrained InAs/GaSb band overlap is 0.142 eV.

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Section: Resultssupporting

confidence: 65%

Section: Appendix C: Constraints On the Luttinger Parameters For Nearmentioning

confidence: 87%

k·pmodel for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices

et al. 2012

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“…Moreover, in T2SL, a special care must be taken owing to their brokengap band alignment to achieve adequate absorption. The band properties exhibited by T2SL is primarily dependent on the design parameters which led several groups to study their electronic band structure using different approaches like k.p [24][25][26][27], empirical tight-binding [28,29], pseudopotential [30] and density functional theory [31]. However, consolidated studies on the variation of the key band parameters regulated by the layer thicknesses for a wide range of operation are still very scarce in the literature.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, the k.p approach with envelope function approximation (EFA) is chosen over other methods to calculate the electronic structure due to its higher accuracy in predicting SL bandgap and excellent handling of interface [32] to balance the strain effects. The discretization of the envelope functions along the out-ofplane direction is incorporated though the finite difference method (FDM) [26,33,34] for its simplicity and accuracy around the high-symmetry point over other techniques like Fourier transform method (FTM) [35] and finite element method (FEM) [36], etc. A proper treatment of the interface is taken by adopting the operatorordered interface matrix [25,26] approach along with the inclusion of a separate interfacial layer within the unit cell.…”

Section: Introductionmentioning

confidence: 99%

“…The discretization of the envelope functions along the out-ofplane direction is incorporated though the finite difference method (FDM) [26,33,34] for its simplicity and accuracy around the high-symmetry point over other techniques like Fourier transform method (FTM) [35] and finite element method (FEM) [36], etc. A proper treatment of the interface is taken by adopting the operatorordered interface matrix [25,26] approach along with the inclusion of a separate interfacial layer within the unit cell. From the design point of view, our results primarily put emphasis on the variations of the miniband positions and the density of states (DOS) effective masses with respect to the layer thicknesses.…”

Section: Introductionmentioning

confidence: 99%

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Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Mukherjee,

Singh,

Bodhankar

et al. 2021

Preprint

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Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and phase-relaxed elastic scattering processes, we show that a selfconsistent non-equilibrium Green's function method within the effective mass approximation can be an effective tool to fairly predict the miniband and spectral transport properties and their dependence on the design parameters such as layer thickness, superlattice periods, temperature, and built-in potential. To benchmark this model, we first evaluate the band properties of an infinite T2SL with periodic boundary conditions, employing the envelope function approximation with a finite-difference discretization within the perturbative eight-band k.p framework. The strong dependence of the constituent material layer thicknesses on the band-edge positions and effective masses offers a primary guideline to design performance-specific detectors for a wide range of operation. Moving forward, we demonstrate that using a finite T2SL structure in the Green's function framework, one can estimate the bandgap, band-offsets, density of states, and spatial overlap which comply well with the k.p results and the experimental data. Finally, the superiority of this method is illustrated via a reasonable estimation of the band alignments in barrier-based multi-color nonperiodic complex T2SL structures. This study, therefore, provides deep physical insights into the carrier confinements in broken-gap heterostructures and sets a perfect stage to perform transport calculations in a full-quantum picture.

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Extracting Interface Absorption Effects from First-Principles

Hachtel

2017

The Nanoscale Optical Properties of Complex Nanostructures

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A k·p model of InAs/GaSb type II superlattice infrared detectors

Cited by 28 publications

References 21 publications

k·pmodel for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices

k·pmodel for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Extracting Interface Absorption Effects from First-Principles

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