A Ka-Band 6-Bit Digital-Controlled Differential VGA With 16-dB Gain Control Range and 4.9° Phase Variation in 65-nm CMOS

Kuai, Yang; Pang, Dongwei; Wu, Shiwei; Wei, Lingling; Cheng, Xin; Xie, Guangjun; Zhang, Zhang

doi:10.1109/lmwc.2021.3115502

Cited by 9 publications

(2 citation statements)

References 13 publications

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“…For phased-array transceiver, amplitude control can be achieved by passive attenuator [6][7][8][9] or active variable gain amplifier (VGA). [10][11][12][13][14][15][16][17] Attenuators usually have high linearity, low power consumption, and simple structure. However, due to the low isolation, the amplitude-phase performance is easily affected by the front and rear loads.…”

Section: Introductionmentioning

confidence: 99%

“…As an urgent demand for communication rate and range resolution of the systems, transceivers usually require greater bandwidth. For phased‐array transceiver, amplitude control can be achieved by passive attenuator 6–9 or active variable gain amplifier (VGA) 10–17 . Attenuators usually have high linearity, low power consumption, and simple structure.…”

Section: Introductionmentioning

confidence: 99%

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X‐Band 130‐nm CMOS transceiver front‐end with a broadband attenuator design for phased‐array systems

Pang,

Wu,

Wang

et al. 2024

Micro & Optical Tech Letters

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This letter demonstrates an X‐band transceiver front‐end in 130‐nm CMOS technology for phased‐array systems. To solve the problem that passive attenuator performance deteriorates significantly in wideband systems, a 6‐bit attenuator with source follower and common‐gate amplifier is proposed. Besides, an 8‐bit vector‐summing phase shifter is implemented in common path to realize the phase coverage of 360° with the least significant bit of 5.625°. In the frequency range of 8–12 GHz, the measured root‐mean‐square (rms) amplitude and phase errors of the attenuator in the transceiver are less than 0.36 dB and 2.2°, respectively. The rms phase and amplitude errors of the phase shifter in the transceiver are less than 4.8° and 0.56 dB, respectively. The whole chip area including pads is 3 × 2.3 mm2.

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