A Ka Band FMCW Transceiver Front-End With 2-GHz Bandwidth in 65-nm CMOS

Ding, Bowen; Yuan, Shengyue; Zhao, Chen; Li, Tao; Tong, Tian

doi:10.1109/tcsii.2018.2849268

Cited by 26 publications

(10 citation statements)

References 7 publications

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“…With the development of wireless communication technology, multi-band antennas are increasingly popular for the multiple bands integrated in a mobile terminal. [1][2][3][4] Due to the interference between the transmitting (Tx) and receiving (Rx) channels, there is a need to improve the isolation between the individual ports. To achieve a high isolation, decoupling networks are used at the input and output ports of the mobile terminal antenna, which usually takes a complex geometry.…”

Section: Introductionmentioning

confidence: 99%

A multimode substrate integrated waveguide based s elf‐hexplexing antenna for mobile terminal applications

Duan

Zhang

Zhou

et al. 2022

Int J RF Mic Comp-Aid Eng

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A low-profile self-hexplexing antenna based on the multimode substrate integrated waveguide (SIW) cavity is presented for mobile terminal applications. It has three feeding ports, each of which can generate two resonant modes. Taking the advantage of the truncated SIW resonant cavity, the footprint of the antenna remains compact in the multiple functional mode scenario. The proposed antenna operates at six different modes, namely TM 10 mode at 3.55 GHz, TM 01 mode at 4.85 GHz, TE 110 mode at 2.45 GHz, TE 220 mode at 5.6 GHz, TE 110 mode at 3.4 GHz and TE 120 mode at 5.35 GHz. Good agreement is achieved between the simulated and measured antenna performance. The excitation and field distribution of each mode is analyzed. Keeping the structure miniaturized, the proposed antenna realizes hex-band characteristics without excessive feeding ports. It can be used for Microwave Access (WIMAX), the 5th Generation Mobile Communication Technology (5G) and Wireless Local Area Network (WLAN) applications, which is suitable for mobile handheld multiband terminals.

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Section: Introductionmentioning

confidence: 99%

A multimode substrate integrated waveguide based s elf‐hexplexing antenna for mobile terminal applications

Duan

Zhang

Zhou

et al. 2022

Int J RF Mic Comp-Aid Eng

View full text Add to dashboard Cite

show abstract

“…However, the increasing demand for a widespread adoption of ADASs calls for System-on-Chip (SoC) implementations. Presently, the CMOS technology provides the most promising solution for the implementation of monolithic mm-wave low-cost radar sensors [6]. Indeed, technology scaling greatly improved frequency performance of CMOS transistors [7][8][9][10][11][12] enabling both mm-wave circuits and the microcontroller to be implemented on the same chip.…”

Section: Introductionmentioning

confidence: 99%

A 1-V 7th-Order SC Low-Pass Filter for 77-GHz Automotive Radar in 28-nm FD-SOI CMOS

et al. 2021

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This paper presents a switched capacitor low-pass filter in a 28-nm fully depleted silicon on insulator CMOS technology for 77-GHz automotive radar applications. It is operated at a power supply as low as 1 V and guarantees 5-dB in-band voltage gain while providing out-of-band attenuation higher than 36 dB and a programmable passband up to 30 MHz. A double sampling technique is adopted, which allows high operating frequency to be achieved while saving power. Moreover, low-voltage biasing and common-mode feedback circuits are exploited to guarantee an almost rail-to-rail output voltage swing. The proposed filter provides an output 1-dB compression point as high as 8.7 dBm with a power consumption of 9 mW. To the authors’ knowledge, this is the first SC-based implementation of a low pass filter for automotive radar applications.

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“…More recently, studies have been underway to configure single-chip transceivers by utilizing high-integrity characteristics of CMOS [3][4][5]. However, it may not communicate smoothly if the transceiver path lacks gain, which is calculated to determine the appropriate margin when performing link budget analysis.…”

Section: Introductionmentioning

confidence: 99%

Optimization Technique for High-Gain CMOS Power Amplifier for 5G Applications

et al. 2021

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In this study, a differential power amplifier (PA) with a high gain of over 30 dB by configuring a three-stage common source unit amplifier was designed. To ensure the stability of the high-gain differential PA, the analysis to apply the capacitive neutralization method to the differential common source PA was conducted. From the analysis, the required neutralized capacitance was quantitatively calculated from the estimated parasitic components of a power cell used in the PA. To verify the feasibility of the proposed optimization technique, a Ka-band PA was designed with a 65 nm RFCMOS process. The measurement results showed a gain of 30.7 dB. The saturated output power was measured as 16.1 dBm, maximum power-added efficiency (PAE) was 29.7%, and P1dB was 13.1 dBm.

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A Ka Band FMCW Transceiver Front-End With 2-GHz Bandwidth in 65-nm CMOS

Cited by 26 publications

References 7 publications

A multimode substrate integrated waveguide based s elf‐hexplexing antenna for mobile terminal applications

A multimode substrate integrated waveguide based s elf‐hexplexing antenna for mobile terminal applications

A 1-V 7th-Order SC Low-Pass Filter for 77-GHz Automotive Radar in 28-nm FD-SOI CMOS

Optimization Technique for High-Gain CMOS Power Amplifier for 5G Applications

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