A Kind of Coating Method of GaN‐MOCVD Graphite Susceptor

Abstract

A novel coating method for the GaN-MOCVD graphite susceptor is proposed in the paper, which means that the upper surface and sides of the graphite susceptor are covered with a low emissivity material coating, and the surface under the susceptor is covered with a high emissivity SiC coating. By using finite element analysis software COMSOL Multiphysics, the temperature field of the susceptors without coating, with common SiC coating, and with improved coating is obtained and compared, which shows that the susceptor with the improved coating not only increases the heating efficiency of the heater, but also improves the temperature uniformity of the substrate, which can be of great benefit to the film growth. In addition, this improved coating for the susceptor has the same heating sensitivity as the common SiC coating.

Numerical analysis for thermal field of susceptor in MOCVD reactor

“…Therefore, this work refers four papers [2][3][4][5] about changing the structure of susceptor. After a detailed comparison, we chose to use the methods that Li et al [3] and Wu et al [2] published for this study.…”

“…In addition, we transformed the material of susceptor, like replacing the graphite to silicon carbine or coating a silicon carbine layer [2] on the bottom of susceptor.…”