A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches

Gordon, Roy G.; Hausmann, Dennis M.; Kim, Esther; Shepard, J.

doi:10.1002/cvde.200390005

Cited by 376 publications

(446 citation statements)

References 5 publications

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“…12 For the field of holes, the required exposure time depends, as expected, 12 quadratically on the hole aspect ratio and is independent of the density of holes. In case of the pillars, we remark not only a dependency on the depth to width ratio of the pillars but also on the density.…”

Section: B Analytic Approximationssupporting

confidence: 52%

“…[12][13][14][15][16][17][18][19][20][21][22][23] At the start of the simulation, a MC particle is generated at a random position in a horizontal "source plane" positioned above the top surface of the 3D structures. The MC particle is emitted with a cosinedistributed random direction and its trajectory is calculated.…”

Section: A 3d Monte Carlo Simulationsmentioning

confidence: 99%

“…With the aim to verify our 3D MC model, we derive in this section analytic approximation formulae for the normalized exposure required to saturate an array of holes and pillars, inspired by the work of Gordon et al 12 and Yazdani et al 24 We assume a molecular flow regime, and therefore, the effective diffusion coefficient D k in a cylindrical hole with pore diameter d pore can be described by the Knudsen diffusivity 25…”

Section: B Analytic Approximationsmentioning

confidence: 99%

“…10,11 To have a better insight in the deposition process and to optimize the process parameters, several analytical and simulation models have been developed to describe the conformal ALD deposition in high aspect ratio structures. Among those, 2D models have been proposed to simulate thermal [12][13][14][15][16][17][18][19][20] and plasma-enhanced ALD in trenches. [21][22][23] This paper introduces a full 3D MC model, enabling simulation of thermal ALD processes in 3D structures.…”

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulations of atomic layer deposition on 3D large surface area structures: Required precursor exposure for pillar- versus hole-type structures

Cremers

Geenen

Detavernier

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested in Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy J. Appl. Phys. 118, 065306 (2015) Due to its excellent conformality, atomic layer deposition (ALD) has become a key method for coating and functionalizing three dimensional (3D) large surface area structures such as anodized alumina (AAO), silicon pillars, nanowires, and carbon nanotubes. Large surface area substrates often consist of arrays of quasi-one-dimensional holes (into which the precursor gas needs to penetrate, e.g., for AAO), or "forests" of pillars (where the precursor gas can reach the surface through the empty 3D space surrounding the pillars). Using a full 3D Monte Carlo model, the authors compared deposition onto an infinite array of holes versus an infinite array of pillars. As expected, the authors observed that the required exposure to conformally coat an array of holes is determined by the height to width ratio of the individual holes, and is independent of their spacing in the array. For the pillars, the required exposure increases with decreasing center-to-center distance and converges in the limit to the exposure of an array of holes. Our simulations show that, when targeting a specific surface area enhancement factor in the range 20-100, a well-spaced pillar geometry requires a 2-30 times smaller precursor exposure than a hole geometry and is therefore more ALD friendly. The difference in required exposure is shown to depend on the initial sticking probability and structural dimensions.

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Section: B Analytic Approximationssupporting

confidence: 52%

Section: A 3d Monte Carlo Simulationsmentioning

confidence: 99%

Section: B Analytic Approximationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulations of atomic layer deposition on 3D large surface area structures: Required precursor exposure for pillar- versus hole-type structures

Cremers

Geenen

Detavernier

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…2 That is to say that to realize conformal CVD, the CVD chemistry must be controlled by kinetics instead of thermodynamics. Typically this means doing CVD at lower temperature.…”

Section: Introductionmentioning

confidence: 99%

Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

Pedersen

2016

Chem. Mater.

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Thin films of inorganic materials are essential to several technologies we take for granted in our everyday lives. They form the basis of touch screens in smart phones and the electronic components in computers. Dating back more than a century, chemical vapor deposition (CVD) is one of the most common methods to form these films. In CVD, the atoms needed for the thin film are typically supplied by a continuous flow of gaseous precursor molecules and incorporated into the film by gas phase and surface chemical reactions. The continuous demand for more precise thin film fabrication on more complex shapes at lower temperatures sets a demand for more advanced CVD methods. The development of better designed precursor molecules is one important path to evolve CVD, the other path is to evolve the way in which we do CVD. In this perspective I will describe how using time as a fourth dimension in CVD can enable fabrication of new thin film materials and material structures at lower temperatures and on more complex substrate geometries by accessing new types of CVD chemistries available in time-resolved CVD.

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Application of Transparent Oxide Semiconductors for Flexible Electronics

Carcia

2010

Transparent Electronics

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Electronics on flexible plastic substrates [1,2] are attractive for portable applications, because plastic is lighter weight, thinner, bendable, and more rugged than glass. Flexible plastic substrates can also be processed reel-to-reel, which should reduce manufacturing cost. Some applications envisioned for flexible electronics include (rollable) displays [3], low cost radio frequency identification (RFID) tags [4], and large area or macroelectronics [5], in general.Plastic substrates, however, are temperature sensitive. Common, inexpensive, plastic substrates, such as poly(ethylene terephthalate) (e.g. PET-Mylar Ò ), can withstand processing only up to $100 C, while poly(ethylene naphthalate) (PEN), in the same polyester family, can be used up to $200 C. (More detail about plastic substrates will be given later in this chapter). However, low mobility ($1 cm 2 V À1 s À1 ), amorphous silicon (a-Si) device technology [6,7], used in liquid crystal displays (LCDs) [8] for laptop computers and large screen flat-panel TVs, requires processing up to 350 C. Moreover, higher performance electronics, based on high mobility ($100 cm 2 V À1 s À1 ) polycrystalline Si technology [6,9], which drives newer organic light emitting displays (OLEDs) [10], require still higher process temperatures, $600 C. (A high mobility translates into a higher output current, and lower voltage and higher frequency operation). However, post-annealing processes used in Transparent Electronics: From Synthesis to Applications Edited by Antonio Facchetti and Tobin J. Marks

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A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches

Cited by 376 publications

References 5 publications

Monte Carlo simulations of atomic layer deposition on 3D large surface area structures: Required precursor exposure for pillar- versus hole-type structures

Monte Carlo simulations of atomic layer deposition on 3D large surface area structures: Required precursor exposure for pillar- versus hole-type structures

Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

Application of Transparent Oxide Semiconductors for Flexible Electronics

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