A Ku-band ultra super low-noise pseudomorphic heterojunction FET in a hollow plastic PKG

Hirokawa, Takatsugu; Negishi, Hitoshi; Nishimura, Yasumasa; Ichikawa, Shoji; Tanaka, J.; Kimura, Tsukasa; Watanabe, Kunihiko; Nashimoto, Y.

doi:10.1109/mwsym.1996.512244

Cited by 4 publications

(2 citation statements)

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“…where L g is the gate length, L 2 is the length of region II, Q ϭ 2k 4 ͉V off ͉, and s 1 ϭ k 2 2 ϩ 4k 4 ͉V off ͉s. The potential drop in regions I and II is calculated by using Eq.…”

Section: Model Formulationmentioning

confidence: 99%

“…However, GaAs PHEMTs find significant use in millimeter-wave low-noise applications, due to their small wafer size, low cost, and processmaturity-related advantages. A plastic packaged GaAs PHEMT device with a gate length of 0.17 m has demonstrated a noise figure of 0.35 dB and associated gain of 12.5 dB at 12 GHz [4]. A precise noise performance modeling of devices and circuits is of primary importance for the development of high-performance RF, microwave, and millimeter-wave integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

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Analytical noise model of a high‐electron‐mobility transistor for microwave‐frequency application

Guru

Vyas

Gupta

et al. 2004

Micro & Optical Tech Letters

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0.520 nm from 1550.620 to 1550.616 nm. The impact of mode competition at around the 1530-nm range is reduced when utilizing the band-pass filter. Therefore, the efficiency needed to produce more Brillouin Stokes is increased and these Stokes experience higher gain in the cavity. CONCLUSIONThe improvement of the number of Stokes in the Brillouin erbiumfiber laser system, incorporating a band-pass filter, has been reported for the first time. The total output power of Brillouin Stokes improved to 2.3 mW with a 21% increment, as compared to that of the conventional design. The maximum number of 15 Brillouin stokes is obtained in the proposed design, which reflects the efficiency of the band-pass filter to suppress the competing modes in the region of 1530 nm. The flatness of the BEFL output can be increased with the use of the band-pass filter.

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“…where L g is the gate length, L 2 is the length of region II, Q ϭ 2k 4 ͉V off ͉, and s 1 ϭ k 2 2 ϩ 4k 4 ͉V off ͉s. The potential drop in regions I and II is calculated by using Eq.…”

Section: Model Formulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%