1997
DOI: 10.1119/1.18547
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A laboratory experiment with blue light-emitting diodes

Abstract: We present a laboratory experiment designed to show the main characteristics of blue light-emitting diodes. The analyzed devices are based on III-V nitrides ͑in which the active layer is a direct band gap In 0.06 Ga 0.94 N alloy͒ and SiC ͑where the active layer is the 6H polytype of this semiconductor, which is of an indirect band gap class͒. From the measurements, an I n relation could be established between light emission and device current, with n values related to both the physical structure and electrolum… Show more

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Cited by 8 publications
(4 citation statements)
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“…For earlier student experiments with LEDs, see [14][15][16][17][18] and references therein. Here, some experiments with a blue and a green LED are presented.…”
Section: Experiments With Ledsmentioning
confidence: 99%
“…For earlier student experiments with LEDs, see [14][15][16][17][18] and references therein. Here, some experiments with a blue and a green LED are presented.…”
Section: Experiments With Ledsmentioning
confidence: 99%
“…At higher temperatures, threshold current increases to higher value and hence more current is needed to turn on the laser for a given amount of output optical power. [4], [5], [6] Experimental Set-up The automated characterization module was built using Student Version of LabVIEW 8.5.1 and its compatible Data Acquisition (DAQ) card, NI USB-6008 for interfacing. The experimental set-up and its working for the two different characteristic studies are explained as under:…”
Section: Theorymentioning
confidence: 99%
“…For example, electrical measurements on forward-biased diodes and Hall devices have been used to measure the semiconducting band gap, [1][2][3][4][5][6] Schottky barrier height, 7 charge carrier density, [8][9][10] carrier transport properties, 11,12 and carrier statistical distributions. 13 Additionally, optical experiments are available to determine the band gap of bulk, 14,15 thin film, 16 and quantum-dot 17 semiconductor samples, the Maxwell-Boltzmann distribution of charge carriers, 18 and the vibration properties of nanomaterials. 19 In this paper, we describe a newly developed instructional lab experiment that implements capacitance-voltage (CV) profiling on a reverse-biased Schottky barrier diode to determine the density of impurity dopants in its semiconductor layer, as well as its built-in electric potential.…”
Section: Introductionmentioning
confidence: 99%