A Large-Area Gravure Printed Process for P-type Organic Thin-Film Transistors on Plastic Substrates

Charbonneau, M.; Locatelli, Denis; Lombard, Stéphanie; Serbutoviez, C.; Tournon, Laurent; Torricelli, Fabrizio; Abdinia, Sahel; Cantatore, Eugenio; Fattori, Marco

doi:10.1109/essderc.2018.8486895

Cited by 12 publications

(19 citation statements)

References 10 publications

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“…Different expressions have been developed in the past, depending on the dominant conduction mechanism through the contact. The cases controlled by space-charge limited transport in low energy contactbarriers [21] or injection limited transport in Schottky barriers [32][33][34][35] are reviewed below.…”

Section: Models For the Contact Region Of Otftsmentioning

confidence: 99%

“…The assumption of a contact-voltage dependent barrier lowering is also found in the study of different semiconductors such as Pt/Ga 2 O 3 diode contacts [57]. Despite the justified physical origin of the contact model (9) and being successfully tested in different OTFTs [32,34,35,42,58], the authors regard it just as a mathematical expression able to reproduce the I D −V C curves and, consequently, the extracted diode parameters are considered as effective model parameters [33].…”

Section: Schottky Barrier Limited Injectionmentioning

confidence: 99%

“…In order to check that the previous results were not fortuitous, a new test on OTFTs with Schottky-limited contacts is carried out. In this set of experiments, we analyze the experimental output and transfer characteristics of Lisicon R SP500 based OTFTs [35], shown with symbols in Figs. 2a-2d.…”

Section: Experiments B: Schottky-limited Contactsmentioning

confidence: 99%

“…A low-k dielectric (Lisicon R D320), with a thickness around 500 nm and a capacitance per unit area of ∼ 3.7 nF/cm 2 , is gravureprinted. Full details about the device fabrication are found in [35].…”

Section: Experiments B: Schottky-limited Contactsmentioning

confidence: 99%

“…A generic analytical model and associated parameter extraction method for the current-voltage characteristics of OTFTs was derived in [19,20], which allows a functional model of the carrier injection through the source contact. Later works have specified this functional model to situations in which one conduction mechanism is dominant, such as the cases of spacecharge limited transport in low energy contact-barriers [21] or injection limited transport in Schottky barriers [32][33][34][35]. Despite these previous efforts, there is no standard OTFT compact model that unifies all the different physical phenomena that take place at the contact region of the OTFT.…”

Section: Introductionmentioning

confidence: 99%

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Versatile model for the contact region of organic thin-film transistors

Romero

González

Deen

et al. 2020

Organic Electronics

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Contact effects in organic thin film transistors (OTFTs) remain an important problem to be solved in these devices. Therefore, the correct physio-chemical modeling of the contact regions in OTFTs is necessary. In this work, a standard model for the contact region of OTFTs is proposed. It is a versatile model that describes the current-voltage characteristics of different kinds of contacts. It reproduces the behavior of Schottky barrier or space-charge limited contacts. It is a simple unified model since only a single parameter is necessary in order to distinguish between both kinds of contacts. The model is easily integrated in a generic compact model for the current-voltage characteristics of OTFTs. The resulting compact model, used in combination with an evolutionary parameter extraction procedure, allows to extract the intrinsic parameters and the current-voltage curves at the contact of single short-channel transistors. There is no need to use transistors with multiple channel lengths to accurately characterize the contact region or the active channel of the transistor. The model is tested with published experimental data of OTFTs with Schottky barrier or space-charge limited contacts. Finally, the method has been used as a diagnostic tool to analyze how an ammonia sensor reacts to different concentrations of the ammonia gas. Interestingly, alterations in the contact region have been detected when the gas concentration varies, transforming the space-charge limited contact of a pristine OTFT into a Schottky barrier contact under the exposure of gas.

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Section: Models For the Contact Region Of Otftsmentioning

confidence: 99%

Section: Schottky Barrier Limited Injectionmentioning

confidence: 99%

Section: Experiments B: Schottky-limited Contactsmentioning

confidence: 99%

Section: Experiments B: Schottky-limited Contactsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Versatile model for the contact region of organic thin-film transistors

Romero

González

Deen

et al. 2020

Organic Electronics

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Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design

Calvet,

El‐Nakouzi,

et al. 2024

Adv Elect Materials

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There is increasing interest in using specialized circuits based on emerging technologies to develop a new generation of smart devices. The process and device variability exhibited by such materials, however, can present substantial challenges for designing circuits. Three models are considered here: a physical compact model, an empirical look‐up table, and an empirical surrogate model based on a multilayer perceptron (MLP) regression. Each one is fit to measurements of discrete organic thin film transistors in the low voltage regime. It is shown that the models provide consistent results when designing artificial neuron circuits, but that the MLP regression provides the highest accuracy and is much simpler to fit compared to the compact model. The targeted technology exhibits non‐ideal behavior such as variable threshold voltage and hysteresis. Using the MLP regression model, the effect of such variability on the performance of an artificial neuron circuit is compared. It is found that these effects alter the neuron firing rate and change the time spent in the on/off states but do not change the basic operation.

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Recent progress in organic field‐effect transistor‐based integrated circuits

Yan

Zhao

Liu

2021

Journal of Polymer Science

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Organic integrated circuits are undergoing rapid development with the extensive research on organic semiconducting materials and the performance improvement of organic field-effect transistors. Organic integrated circuits not only cover all the major circuit types, their complexity, degree of integration, and performance have also been improved in recent years. In this review, recent advances in the design and fabrication of integrated circuits based on organic field-effect transistors are reported. The circuits are categorized into digital and analog, which are discussed in detail centering on the structure, fabrication process, and performance. In addition, progress in the modeling and simulation of organic integrated circuits are discussed as well, as they are key issues for the future development of organic electronics.

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A Large-Area Gravure Printed Process for P-type Organic Thin-Film Transistors on Plastic Substrates

Cited by 12 publications

References 10 publications

Versatile model for the contact region of organic thin-film transistors

Versatile model for the contact region of organic thin-film transistors

Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design

Recent progress in organic field‐effect transistor‐based integrated circuits

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