A large-signal, analytic model for the GaAs MESFET

Khatibzadeh, Marziyeh; Trew, R.J.

doi:10.1109/22.3510

Cited by 104 publications

(23 citation statements)

References 17 publications

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“…Compact physics-based models, however, can run in harmonic balance solvers because they are analytic and therefore sufficiently efficient in computation time requirements that they can predict the operation of an RF HFET under large-signal RF drive conditions. Previous work has demonstrated the facility and accuracy of this approach [19,20]. Unfortunately, however, this capability is not generally available, because the previously reported models could not be readily ported to commercial simulators.…”

Section: Introductionmentioning

confidence: 99%

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Hou

Bilbro

Trew

2012

Active and Passive Electronic Components

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We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.

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Section: Introductionmentioning

confidence: 99%

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Hou

Bilbro

Trew

2012

Active and Passive Electronic Components

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“…For the fixed value of , an optimization is then performed over to find the optimal set of mapping parameters (19) Let be the netlist whose parameters are set to these optimal values. The final fitness value returned for a given netlist is thus fitness (20) The full search by the genetic algorithm in order to find the optimal circuit topology with optimal mapping structure can then be written as fitness (21) This whole process is illustrated graphically in Fig. 11.…”

Section: ) Mapping a Circuit To A Fitness Valuementioning

confidence: 99%

“…This paper explores further advances in the application of ANN and space mapping for modeling of nonlinear microwave devices. Nonlinear device modeling is an important area of microwave CAD, and many device models have been developed [19], [20], such as physics-based models [21]- [23], equivalent-circuit-based models [24]- [29], or table-based models [30]. With the continuous development of semiconductor device technologies, new devices constantly evolve and existing models need to be updated.…”

mentioning

confidence: 99%

Evolutionary Neuro-Space Mapping Technique for Modeling of Nonlinear Microwave Devices

Gorissen

Zhang

et al. 2011

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper presents a new advance in Neuro-space mapping (Neuro-SM) techniques for modeling nonlinear microwave devices. Suppose that existing device models (namely, coarse models) cannot match the behavior of a new device (referred to as the fine model). By neural network mapping of the voltage and current signals from the coarse to the fine models, Neuro-SM can modify the behavior of the coarse model to match that of the fine model. However, the efficiency of mapping depends on both the mapping structure and the coarse model. In this paper, a structural optimization technique is presented to achieve optimal combinations of mapping structure and coarse model. An aggressive optimization formulation exploring detailed structural variations in both the mapping and the coarse model is proposed, where the internal branches of coarse models and separate mappings for the voltage and current at gate and drain are used as basic topology variables. The formulation of such a structural optimization by an evolutionary optimization algorithm is proposed. Numerical examples of metal-semiconductor field-effect transistor and high electron-mobility transistor modeling demonstrate that, by using the proposed algorithm, optimal combinations of space mapping and coarse model structures can be achieved leading to the best modeling accuracy with the simplest mapping function.Index Terms-Genetic algorithms, knowledge-based modeling, nonlinear device modeling, space mapping.

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“…Equivalent-circuit element values for the intrinsic device were predicted from the model. Ladbrooke [64] described comprehensive physics-based equivalent-circuit models for MESFETs and HEMTs, taking into account surface effects and dispersive trapping phenomena [64] (see also [65] [66], [67] reported a model that is particularly suited to large-signal characterization of FETs.…”

Section: B Physical Modelsmentioning

confidence: 99%

Computer-aided design of RF and microwave circuits and systems

Steer

Bandler

Snowden

2002

IEEE Trans. Microwave Theory Techn.

125

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Abstract-The history of RF and microwave computer-aided engineering is documented in the annals of the IEEE Microwave Theory and Techniques Society. The era began with elaborate analytically based models of microwave components and simple computer-aided techniques to cascade, cascode, and otherwise connect linear component models to obtain the responses of linear microwave circuits. Development has become rapid with today's computer-oriented microwave practices addressing complex geometries and with the ability to globally model and optimize large circuits. The pursuit of accurate models of active devices and of passive components continues to be a key activity.

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A large-signal, analytic model for the GaAs MESFET

Cited by 104 publications

References 17 publications

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Evolutionary Neuro-Space Mapping Technique for Modeling of Nonlinear Microwave Devices

Computer-aided design of RF and microwave circuits and systems

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