A Laser-Trimmed Rail-to-Rail Precision CMOS Operational Amplifier

Singh, Rishi Pratap; Audet, Yves; Gagnon, Yves; Savaria, Yvon; Boulais, Étienne; Meunier, M.

doi:10.1109/tcsii.2010.2104011

Cited by 13 publications

(8 citation statements)

References 9 publications

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“…A first step in this direction would be to identify the optical properties of subsurface modifications in silicon, including the changes to the refractive index. Apart from optical applications, laser modifications have shown to be capable of reducing the resistivity of polycrystalline silicon buried below dielectric material [14,15]. It is therefore worthwhile to investigate the electrical properties of laser-induced subsurface modifications, to establish whether resistivity changes can also be induced inside (poly)silicon.…”

Section: Discussionmentioning

confidence: 99%

“…Besides wafer dicing, laser modifications have been employed to precisely control the resistivity of thin polycrystalline silicon films buried under layers of dielectric material [14,15], for use in precision analog devices. The change in resistivity is expected to be due to localized crystallization at grain boundaries, induced by heating the material to a temperature below the melting point [15].…”

Section: Introductionmentioning

confidence: 99%

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Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Verburg¹,

Römer²,

Veld³

2014

Opt. Express

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Three-dimensional bulk modification of dielectric materials by multiphoton absorption of laser pulses is a well-established technology. The use of multiphoton absorption to machine bulk silicon has been investigated by a number of authors using femtosecond laser sources. However, no modifications confined in bulk silicon, induced by multiphoton absorption, have been reported so far. Based on results from numerical simulations, we employed an erbium-doped fiber laser operating at a relatively long pulse duration of 3.5 nanoseconds and a wavelength of 1549 nm for this process. We found that these laser parameters are suitable to produce modifications at various depths inside crystalline silicon.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Verburg¹,

Römer²,

Veld³

2014

Opt. Express

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“…Depending on the technology and circuit, laser or other methods of continuously trimming resistors are available (e.g. ). Tuning methods in discrete steps are based on the switching in or out of discrete units of resistor or capacitor arrays (e.g.…”

Section: Practical Considerationsmentioning

confidence: 99%

Ladder tuning‐block partitioned filters for simplified tuning

Jurisic

Moschytz

2012

Circuit Theory & Apps

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SUMMARY In this paper, we present a procedure for the design of low‐sensitivity, active‐RC filters that permits efficient functional tuning during the manufacturing process. Filters with finite zeros, such as elliptic (Chebyshev–Cauer) low‐pass filters are primarily considered, although the method can be applied to the design of other filters, e.g. allpole filters, as well. We show how to partition a given ladder filter into two parts. The first is a ladder filter of reduced order compared to the original; the second is a second‐ or third‐order active‐RC filter section, the ‘tuning block’, which, alone is used to tune the overall filter. The ladder, the components of which are fixed, provides most of the selectivity, while the cascaded tuning block determines the band‐edge characteristics and can be tuned relatively easily. A detailed design procedure for the filter partitioning is given. By obtaining a doubly terminated ladder filter, which is cascaded with a tuning block, both the inherent low sensitivity of the ladder and the tunability of the tuning block, are maintained. A Monte Carlo analysis of the partitioned filter demonstrates that the low sensitivity with respect to component tolerances, achievable by maintaining a doubly terminated ladder structure for the larger partitioned part of the filter, is preserved. Copyright © 2012 John Wiley & Sons, Ltd.

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“…Moreover, the formation of optical components in silicon is of interest, as these components can be combined with integrated circuits on a single chip [20]. Finally, laser-induced subsurface modifications may be employed for resistivity tuning [21,22].…”

Section: Introductionmentioning

confidence: 99%

Crystal structure of laser-induced subsurface modifications in Si

et al. 2015

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Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to midinfrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this work, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. In addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-III/Si-XII occur as a result of the laser irradiation.

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A Laser-Trimmed Rail-to-Rail Precision CMOS Operational Amplifier

Cited by 13 publications

References 9 publications

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Ladder tuning‐block partitioned filters for simplified tuning

Crystal structure of laser-induced subsurface modifications in Si

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