2020
DOI: 10.1039/c9nr08745a
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A layered Ge2Sb2Te5phase change material

Abstract: In this study, a universal Ge2Sb2Te5 phase change material was sputtered to obtain a layered structure.

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Cited by 7 publications
(2 citation statements)
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“…We invented a new method to synthesis 2D material. Many chalcogenide 2D materials have been successfully prepared with this method in our group [35][36]. In this paper, assputtered tungsten thin film is observed in a stack of 2D monolayers.…”
Section: Introductionmentioning
confidence: 99%
“…We invented a new method to synthesis 2D material. Many chalcogenide 2D materials have been successfully prepared with this method in our group [35][36]. In this paper, assputtered tungsten thin film is observed in a stack of 2D monolayers.…”
Section: Introductionmentioning
confidence: 99%
“…At 1217.4 eV in Ge 2p3/2, the spectrum corresponds to the Ge-Te bond [9]. At 529 eV in Sb 3d5/2 and 573.15 eV in Te 3d5/2, they both correspond to the Sb-Te bond [10]. The binding energy of the Ge-Te bond increases after radiation, while the binding energy of the Ge-O bond is approximately 1220 eV.…”
Section: Resultsmentioning
confidence: 99%