A LEED and AES study of the Ph3 adsorption on clean Si(111)

Bommel, A.J. Van; Crombeen, J.E.

doi:10.1016/0039-6028(73)90418-4

Cited by 23 publications

(13 citation statements)

References 3 publications

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“…They also showed that the saturation phosphorus coverage obtainable from phosphine adsorption was temperature dependent, with the maximum phosphorus coverage upon PH 3 adsorption at temperatures up to 673 K being 25%, increasing to a full monolayer for adsorption at 823 K. Phosphorus desorption in the form of P 2 occurred at higher temperatures (≥900 K) which resulted in a decrease in the phosphorus concentration. Van Brommel and Crobeen speculated that this full monolayer coverage could also be reached on the Si(111) surface.…”

Section: Introductionmentioning

confidence: 99%

P₂ Desorption from Phosphine Decomposition on Si(100) Surfaces

1998

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Phosphorus desorption following phosphine (PH3) adsorption on the Si(100) surface was analyzed via temperature-programmed desorption (TPD) and Auger electron spectroscopy. Phosphine partially decomposes upon adsorption at room temperature. Hydrogen (H2) and phosphine are produced via recombinative desorption during TPD. At higher temperatures the remaining phosphorus desorbs in the form of P2. At low P coverages, a single α state is present in the desorption spectra which obeys second-order kinetics with an activation energy of 72 kcal/mol. At coverages around 21% of a phosphorus monolayer, a second β state appears at lower temperatures which also obeys second-order kinetics with a desorption energy of 57 kcal/mol. At coverages greater than about 42% of a phosphorus monolayer, a third desorption state is observed.

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Section: Introductionmentioning

confidence: 99%

P₂ Desorption from Phosphine Decomposition on Si(100) Surfaces

1998

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“…Several previous studies have investigated the interaction of PH 3 with Si(111) and Si(001) surfaces. On the Si(111) surface, − electron energy loss spectroscopy studies have shown that PH 3 dissociates on Si(111) at temperatures as low as 120 K, producing a distinct PH 2 wagging mode vibration. , Yu, Meyerson, and co-workers − first studied the interaction of PH 3 with Si(001) using secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption (TPD), and low-energy electron diffraction (LEED). On the basis of their observations of two distinct core−level shifts for phosphorus and a sharp (2 × 1) LEED pattern persisting after PH 3 exposure, they concluded that on Si(001) most PH 3 molecules adsorbed without dissociation.…”

Section: Introductionmentioning

confidence: 99%

Adsorption and Dissociation of Phosphine on Si(001)

1996

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The adsorption and thermal decomposition of phosphine (PH 3 ) on the Si(001) surface has been investigated using Fourier transform infrared spectroscopy. Phosphine is found to adsorb both nondissociatively and dissociatively, depending on the coverage and flux during exposure. Infrared spectra reveal that PH 3 dissociates to produce two distinct forms of PH 2 . Further decomposition yields phosphorus atoms and surface hydrogen. The surface P atoms form P-Si heterodimers and, in the presence of surface hydrogen, form PSiH "hydrided heterodimers". The bonding of hydrogen in this form is stronger than on the clean Si surface, resulting in a higher desorption temperature for hydrogen when phosphorus is present on the surface. Molecular orbital calculations are used to provide insight into the bonding geometry of PH 3 on Si(001).

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“…Van Bommel et al 10 first studied the interaction of PH3 with the Si( 111) surface using low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). Bozso and Avouris11 and, more recently, Yates and co-workers12-14 have studied the interaction of PH3 with the Si( 111 )-(7 X7) surface using a variety of techniques including photoemission, high-resolution electron ion scattering spectroscopy (ISS), high-resolution electron energyloss spectroscopy (HREELS), temperature-programmed desorption (TPD), and electron-stimulated desorption (ESD).…”

Section: Introductionmentioning

confidence: 99%

An Atomically Resolved STM Study of the Interaction of Phosphine with the Silicon(001) Surface

Wang¹,

Bronikowski²,

Hamers³

1994

J. Phys. Chem.

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The interaction of phosphine (PH3) with the Si(OO1) surface has been investigated with scanning tunneling microscopy. At 300 K, PH3 adsorbs molecularly on top of a single Si=Si dimer with the phosphorus atom in a pentacoordinate configuration. Phosphine adsorption is accompanied by occasional ejection of silicon atoms from the substrate onto the surface, creating surfacevacancies and Si adatoms. Si atoms are preferentially ejected from defect sites. At high coverage, adsorbed PH3 molecules order into small regions of ~( 4 x 2 ) symmetry, and the ejected silicon nucleates into small dimer strings. The long-range order of the molecular PH3 is disrupted by domain boundaries and the ejected silicon. Annealing PH3-saturated surfaces produces further ejection of silicon onto the surface, resulting in large silicon islands covering approximately 20% of the surface.

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A LEED and AES study of the Ph3 adsorption on clean Si(111)

Cited by 23 publications

References 3 publications

P₂ Desorption from Phosphine Decomposition on Si(100) Surfaces

P₂ Desorption from Phosphine Decomposition on Si(100) Surfaces

Adsorption and Dissociation of Phosphine on Si(001)

An Atomically Resolved STM Study of the Interaction of Phosphine with the Silicon(001) Surface

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A LEED and AES study of the Ph3 adsorption on clean Si(111)

Cited by 23 publications

References 3 publications

P2 Desorption from Phosphine Decomposition on Si(100) Surfaces

P2 Desorption from Phosphine Decomposition on Si(100) Surfaces

Adsorption and Dissociation of Phosphine on Si(001)

An Atomically Resolved STM Study of the Interaction of Phosphine with the Silicon(001) Surface

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P₂ Desorption from Phosphine Decomposition on Si(100) Surfaces

P₂ Desorption from Phosphine Decomposition on Si(100) Surfaces