A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices

Abstract

A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.

Preparation and light-controlled resistive switching memory behavior of CuCr2O4

“…The absolute values of V Reset and V Set increase with the increasing power density of illumination. That is to say that the illumination can control the resistive switching, which is consistent with the reported results in previous literature [43][44][45][46][47].…”

“…This bipolar resistive switching behavior should be resulted from the trapped and detrapped charge in the Schottky-like depletion layer [48][49][50][51][52][53][54]. The white light can modulate the resistive switching behavior by a large number of photogenerated charges [44][45][46][47].…”

Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

“…The fabrication of memristor at Hewlett-Packard labs [1], proved mathematical proposition for memristive behaviour given by Chua [2], and kickstarted an active area of research in modern material science and device research. The potential applications for memristive devices are ultimate high density, efficient and durable memory devices [3][4][5], neuromorphic application [6,7], and analogue computing [8].…”

Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

“…[23][24][25][26] Among these, the properties of ZnO have attracted particular interest, due to its wide bandgap, adjustable doping and potential in application in the areas of photodiodes, piezoelectric devices and solar cells. [27][28][29] Many researchers have investigated the memristive behavior of ZnO in various structural motifs, [30][31][32][33] and from which it has been established that the drifts of oxygen ions (or oxygen vacancies) induced by surface treatment can enhance resistive switching in ZnO. 34 Here in this work we investigate the effect of surface modification on the memristive properties of ZnO NWs and demonstrate hysteresis in current-voltage response that is dependent on the history of the device.…”