A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

Sidhu, R.; Duan, Ning; Campbell, Joe C.; Holmes, A. L.

doi:10.1109/lpt.2005.859163

Cited by 68 publications

(35 citation statements)

References 13 publications

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“…However, devices based on these materials have intrinsic drawbacks such as inferior material uniformity, low yield and lowtemperature operation requirement [1,2]. Photodiodes utilizing quantum well structures such as type-II InGaAs/GaAsSb quantum wells have also been reported to operate in this mid-infrared spectral range [3]. Nevertheless, the overall performance of these devices is not yet satisfactory for practical applications at room temperature.…”

Section: Introductionmentioning

confidence: 99%

High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6μm

Shao

Torfi

et al. 2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6μm

Shao

Torfi

et al. 2009

Journal of Crystal Growth

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“…In these structures, electrons and holes are confined in adjacent layers, and optical transitions have a smaller effective bandgap, which enables longer wavelength operations [5][6][7]. In addition, type-I transitions in the InGaAs and GaAsSb layers enable a NIR response.…”

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confidence: 99%

Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP

2011

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The near-infrared quantum efficiency of pin photodetectors based on a lattice-matched type-II InGaAs/GaAsSb absorption region has been measured. The quantum efficiencies for these devices are 80.2 and 57.8% at 1064 and 1550 nm, respectively. These results are comparable to the more commonly-used InGaAs/InP photodetectors.Introduction: The near-infrared (NIR) and short-wavelength-infrared (SWIR) wavelength ranges are of great interest for military and civil applications such as telecommunications, night vision, gas monitoring and detection, tumour sensing and chemical forensics [1]. Photodetectors based on the InGaAs/InP absorption region are typically used for wavelengths below 1.65 mm owing to their high quantum efficiency (QE) and low dark current. Extending the wavelength beyond 1.65 mm requires a different absorption region. On InP substrates, approaches include strain compensated In 1-x Ga x As (x , 0.47) quantum well photodiodes which have achieved a cutoff wavelength of 2.15 mm [2] or relaxed In 0.65 Ga 0.35 As grown on InP photodetectors which have an operation wavelength 2 mm [3]. On GaSb substrates, bulk InAsSb detectors have photoresponse covering the spectral range 1.7-4.2 mm, but need cryogenic operation owing to high dark current [4].Over the past few years, we have developed InGaAs/GaAsSb type-II quantum wells as an alternative absorption region for the SWIR. In these structures, electrons and holes are confined in adjacent layers, and optical transitions have a smaller effective bandgap, which enables longer wavelength operations [5][6][7]. In addition, type-I transitions in the InGaAs and GaAsSb layers enable a NIR response. In this reported work, we measured the NIR (0.85-1.8 mm) response of a type-II pin photodetector using a lattice-matched InGaAs/GaAsSb MQW absorption region. The results show that the quantum efficiencies of these devices are comparable to InGaAs/InP photodetectors. Thus, InGaAs/GaAsSb type-II MQW absorption regions are promising candidates for broadband detection in the NIR/SWIR.

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“…Although HgCdTe material is already used to build devices working at these ranges, it suffers from slow response, high-power dissipation and undesired noise [7]. III-Sb based devices appear as a counterpart, since it is offering several advantages such as wide spectral range, low electron effective mass and high mobility at room temperature [8].…”

Section: Sb-based Qd-soamentioning

confidence: 99%

The Composition Effect on the Dynamics of Electrons in Sb-Based QD-SOAs

Al-Nashy¹,

Al-Khursan²

2012

Selected Topics on Optical Amplifiers in Present Scenario

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A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

Cited by 68 publications

References 13 publications

High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6μm

High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6μm

Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP

The Composition Effect on the Dynamics of Electrons in Sb-Based QD-SOAs

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