A Low-Cost and Low-Power CMOS Receiver Front-End for MB-OFDM Ultra-Wideband Systems

Ranjan, M.; Larson, L.E.

doi:10.1109/jssc.2006.891725

Cited by 28 publications

(16 citation statements)

References 16 publications

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“…Figure 8 shows the measured conversion gain of 17. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].5 dB which is tested by SA. The measured input return loss, tested by Agilent 8510C vector signal analyzer, shows slight mismatch and has the modest high reflection of S 11 ¼ À6.7 dB around 5 GHz.…”

Section: Resultsmentioning

confidence: 99%

“…The requirements of the UWB RF receiver are the flat gain response, low noise figure (NF), high linearity, suitable power dissipation, well match at 50 X input impedance, and small chip area over a wide frequency range. To satisfy these requirements, there are several methods in design of UWB RF receiver [2][3][4][5][6][7]. However, there is no single method that exists to provide the solution for aforementioned requirements.…”

Section: Introductionmentioning

confidence: 99%

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3.1–10.6 GHz ultra‐wideband RF receiver in 0.18 μm CMOS technology

Chiou

Chen

2009

Micro & Optical Tech Letters

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fed monopole antenna having frequency band-notch function, IEEE Microwave Wireless Compon Lett 15 (2005), 766-768. 2. FCC first report and order on ultra-wideband technology,2002. Planar ultrawideband antennas with multiple notched bands based on etched slots on the patch and/or split ring resonators on the feed line, principle applied to the design of metasurfaces and metamaterials, Phys Rev Lett 93 (2004), A miniature UWB planar monopole antenna with 5-GHz band-rejection filter and the time-domain characteristics,ABSTRACT: This article presents an ultra-wideband (UWB). RF receiver that includes a low noise amplifier (LNA) and a singlebalanced mixer (SBM). The LNA uses an RC shunt feedback technique for broadening the bandwidth. Besides, an inductor is used as an Figure 8 Measured y-z plane and x-z plane radiation pattern for proposed antenna at (a) 3.5 GHz and (b) 9 GHz 232interstage match at the cascode LNA that efficiently improves the flatness of the cascode LNA. The RC shunt feedback is also applied to the g m stage of mixer for the input impedance match. The low-pass IF load is used to improve the LO/IF isolation of the SBM. The measured results of the UWB RF receiver are a conversion gain of 17.5-19.5 dB, a double side-band noise figure of 5.25-6.89 dB at 100 MHz IF frequency under an LO power of 2 dBm, a minimal 1-dB compression point (P 1dB ) of À31 dBm, an input third order intercept point of À12 dBm, the isolations among all ports of better than À40 dB. The total power consumption is 29.1 mW.ABSTRACT: A dual-band microstrip bandpass filter is proposed. With the assistance of modified short-circuit quarter-wavelength resonators, the dual-band bandpass filter can be developed. Theoretical analysis and design procedures are provided; the prototypical bandpass filter with dual passbands is fabricated and measured as well. Well-matched simulated results and experimental data validate the proposed filter.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

3.1–10.6 GHz ultra‐wideband RF receiver in 0.18 μm CMOS technology

Chiou

Chen

2009

Micro & Optical Tech Letters

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“…Moreover, the proposed filter is designed based on the conventional parallel-coupled bandpass filters [5][6][7][8][9]. Section 2 introduces the filter design and the procedures of filter synthesis with the assistance of modified short-circuit quarter-wavelength resonators.…”

Section: Introductionmentioning

confidence: 99%

“…As an alternative to the dielectric resonators, low-cost micromachined air-cavity resonators have been demonstrated using bulk micromachining of silicon. Great fabrication accuracy of the silicon micromaching technique provides excellent performances upto millimeter-wave frequencies without introducing a dielectric loss [5][6][7]. Recently, we have developed a V-band parallel-feedback oscillator based on a thin-film substrate with a flip-chip interconnection, which in a micromachined air-cavity resonator serves as a parallel-feedback element [8].…”

Section: Introductionmentioning

confidence: 99%

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Design of a microstrip dual‐band filter with modified short‐circuit quarter‐wavelength resonators

Tang

Shen

2009

Micro & Optical Tech Letters

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characteristic of a SBM. Figure 11 shows the measured LO/IF isolation. As can be seen, a better than À40 dB isolation is achieved across the UWB frequency. The LO/RF and RF/IF isolations are also better than À40 dB. The total power consumption is 29.1 mW from a 1.8 V power supply. Table 1 summarizes the measured results and the previous reports on UWB RF receiver [2,[5][6][7]. CONCLUSIONSUWB RF receiver using 0.18-lm CMOS technology is presented, which includes an LNA and a SBM. The inter-stage inductor is used to combine with the RC shunt feedback LNA for broadening the bandwidth up to 10 GHz. Furthermore, the lowpass IF load and RC shunt feedback techniques are used in the IF and g m stages of mixer. These techniques not only flattens the power gain, including the entire bandwidth, but also provides the high LO/IF isolation of UWB RF receiver. As this integrated receiver has an overall good RF performance with low power consumption and compact chip area, it will find many applications in UWB RF transceiver. ACKNOWLEDGMENTSThis article is partially supported by National Science Council of the Republic of China under Contract No. NSC97-2628-E-008-001-MY3. National Chip Implementation Center (CIC) and TSMC for chip fabrication are also acknowledged. ABSTRACT: A dual-band microstrip bandpass filter is proposed. With the assistance of modified short-circuit quarter-wavelength resonators, the dual-band bandpass filter can be developed. Theoretical analysis and design procedures are provided; the prototypical bandpass filter with dual passbands is fabricated and measured as well. Well-matched simulated results and experimental data validate the proposed filter.

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Reconfigurable Multi-Band OFDM UWB Receivers: Circuits and System Considerations

Baldini

Manstretta

Erseghe

et al. 2009

Series on Integrated Circuits and Systems

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ULTRA wideband (UWB) is intended to provide a standard for high-speed short range wireless communication [1,2]. The ECMA 368 Standard [2] specifies the physical and medium access control layers for UWB networks using Multi-band Orthogonal Frequency Division Modulation (MB-OFDM). The spectrum from 3.1 to 10.6 GHz is divided into 14 bands of 528 MHz. Supported data rates range from 53.3 to 480 Mbps with a data-rate adaptation mechanism allowing each receiver to opt for the transmitter's data rate for the maximum throughput. The receiver RF front-end and the frequency synthesizer pose the highest design challenges. We will concentrate only on the former due to space limitations. Covering a broad bandwidth is quite challenging, especially for a CMOS implementation, where tuning out capacitive parasitics is the key to achieve low-power operation. An important aspect in UWB communication is the interference between different UWB devices and from other systems. Nearby wireless devices can produce in-band interference due to intermodulation and harmonic generation in the receiver front-end. In this chapter, we will evaluate the effects of interferers on the desired UWB signal, resulting from cross-modulation, intermodulation and harmonic distortion. Some of the existing receiver solutions will be reviewed and a receiver architecture with enhanced linearity performances will be described.

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A Low-Cost and Low-Power CMOS Receiver Front-End for MB-OFDM Ultra-Wideband Systems

Cited by 28 publications

References 16 publications

3.1–10.6 GHz ultra‐wideband RF receiver in 0.18 μm CMOS technology

3.1–10.6 GHz ultra‐wideband RF receiver in 0.18 μm CMOS technology

Design of a microstrip dual‐band filter with modified short‐circuit quarter‐wavelength resonators

Reconfigurable Multi-Band OFDM UWB Receivers: Circuits and System Considerations

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