2006
DOI: 10.1016/j.sna.2006.07.020
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A low loss flexural plate wave (FPW) device through enhanced properties of sol–gel PZT (52/48) thin film and stable TiN-Pt bottom electrode

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Cited by 3 publications
(1 citation statement)
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“…EXPERIMENTAL Four 2" Si wafers of n-type, each housing 8 ultra thin (2 µm) Si membranes were used for the experiments. The diaphragms were fabricated through timed wet etching [3] with a thick layer of silicon oxide as the mask. The wafers were then ion implanted with H 2 at two energies (100, 125 keV) and four dose levels (1E16, 3E16, 1E17 and 3E17 ions/cm 2 ).…”
Section: Introductionmentioning
confidence: 99%
“…EXPERIMENTAL Four 2" Si wafers of n-type, each housing 8 ultra thin (2 µm) Si membranes were used for the experiments. The diaphragms were fabricated through timed wet etching [3] with a thick layer of silicon oxide as the mask. The wafers were then ion implanted with H 2 at two energies (100, 125 keV) and four dose levels (1E16, 3E16, 1E17 and 3E17 ions/cm 2 ).…”
Section: Introductionmentioning
confidence: 99%