A low-loss, single-pole, four-throw RF MEMS switch driven by a double stop comb drive

Kang, Sung-Myung; Kim, H C; Chun, Kukjin

doi:10.1088/0960-1317/19/3/035011

Cited by 37 publications

(18 citation statements)

References 25 publications

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“…Electrostatic devices, on the contrary, can be produced with simpler manufacturing processes, but require higher actuation voltages. However, the example devices reported in Table 2 show that research is aimed at improving the electrical requirements for electrostatic MEMS switches, with actuation voltages scaling from approximately 30-50 V [77,79,81,84] to 10-15 V [85,86]. Further design and fabrication enhancements have enabled the production of electrostatic MEMS switches with actuation voltages lower than 10 V [21,[45][46][47].…”

Section: Examples Of Generic Mems Switches With Various Actuation Schmentioning

confidence: 99%

Integrated Magnetic MEMS Relays: Status of the Technology

2014

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Abstract:The development and application of magnetic technologies employing microfabricated magnetic structures for the production of switching components has generated enormous interest in the scientific and industrial communities over the last decade. Magnetic actuation offers many benefits when compared to other schemes for microelectromechanical systems (MEMS), including the generation of forces that have higher magnitude and longer range. Magnetic actuation can be achieved using different excitation sources, which create challenges related to the integration with other technologies, such as CMOS (Complementary Metal Oxide Semiconductor), and the requirement to reduce power consumption. Novel designs and technologies are therefore sought to enable the use of magnetic switching architectures in integrated MEMS devices, without incurring excessive energy consumption. This article reviews the status of magnetic MEMS technology and presents devices recently developed by various research groups, with key focuses on integrability and effective power management, in addition to the ability to integrate the technology with other microelectronic fabrication processes.

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Section: Examples Of Generic Mems Switches With Various Actuation Schmentioning

confidence: 99%

Integrated Magnetic MEMS Relays: Status of the Technology

2014

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“…Good RF characteristics can be achieved by large contact force and a lateral resistive gold-to-gold(Au-to-Au) contact. Mechanical reliability can be achieved by using SCS, which has no residual stress as a structural material [7]. Better insertion loss characteristics can be obtained from the tapered signal lines.…”

Section: Rf Mems Switch Designmentioning

confidence: 99%

“…The process flow of proposed switch was reported previously [7]. Four photo masks were used in the process.…”

Section: Process Flowmentioning

confidence: 99%

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A Single-Pole, Eight-Throw, Radio-Frequency, MicroElectroMechanical Systems Switch for Multi-Band / Multi-Mode Front-End Module

Kang¹,

Kim²,

Chun³

2011

Journal of Sensor Science and Technology

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This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

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“…Recent bulk micromachined MEMS switches also have waveguides and actuators integrated on the same surface of a device chip [6,7]. As a result, the potentials of the bulk micromachined RF-MEMS switches are yet to be discovered alongside the fast development of the silicon deep reactive ion etching (DRIE) and related processes.…”

Section: Introductionmentioning

confidence: 99%

An SOI bulk-micromachined dual SPDT RF-MEMS switch by layer-wise separation design of waveguide and switching mechanism

Yamane

Sun

Seita

et al. 2010

IEICE Electron. Express

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Abstract:A compact monolithic RF-MEMS switch (2 mm×4 mm in area) with the dual single-pole-double-throw (SPDT) configuration was developed by using the SOI bulk micromachining technique. The electrostatic comb-drive actuators and the mechanically movable coplanar waveguides were implemented on the low-resistive active SOI layer and the high-resistive handle layer, respectively, to effectively allocate the device footprint. Electrical crosstalk between the waveguide and the electrostatic actuator was suppressed by using the buried silicon dioxide layer. At a driving voltage of 35 V, the switch exhibits an insertion loss of 3 dB and isolation of 30 dB at 12 GHz. Keywords: RF-MEMS switch, SOI wafer, layer-wise layout, electroplating, electrostatic actuator, laterally actuated Classification: Micro-or nano-electromechanical systems

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A low-loss, single-pole, four-throw RF MEMS switch driven by a double stop comb drive

Cited by 37 publications

References 25 publications

Integrated Magnetic MEMS Relays: Status of the Technology

Integrated Magnetic MEMS Relays: Status of the Technology

A Single-Pole, Eight-Throw, Radio-Frequency, MicroElectroMechanical Systems Switch for Multi-Band / Multi-Mode Front-End Module

An SOI bulk-micromachined dual SPDT RF-MEMS switch by layer-wise separation design of waveguide and switching mechanism

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