A low power CMOS voltage reference based on body effect

Abstract

A voltage reference of low supply voltage and low power consumption has been proposed and simulated using 0.18 m process in this paper. Utilizing the body effect, temperature compensation is achieved without using any other special devices such as thick gate oxides MOSFETs with higher threshold. The simulation results show that the line sensitive is 0.73 ppm/V in a supply voltage range of 0.6 V to 2 V and the temperature coefficient is typically 23.7 ppm/℃ in a temperature range of À20℃ to 80℃ with the power consumption of 30.5 nW at room temperature. The power supply rejection ratio is À40 dB at 10 Hz and À32 dB at 100 Hz, respectively.

A 12.8 nA and 7.2 ppm/°C CMOS voltage reference without amplifier

“…The total current is 40nA. [6] also uses a high threshold voltage (HVT) MOSFET, and current is only 7 nA, but the TC is as high as 142ppm/ • C. [7,8] and [9] obtain temperature compensation by the body effect and the two source coupled pairs, respectively, but the supply voltage and the current are still not low enough, which are more than 0.85 V for [7] and 214 nA for [9], respectively.…”

A 0.85 V, 4.9 ppm/°C inherent temperature compensated voltage reference with −82 dB PSRR

“…To overcome those disadvantages, the state-of-the-art VRs gradually substitute subthreshold MOSFETs for bipolar transistors [3,5,6,9]. As a result, the supply voltage can reduce to under 1 V and power consumption may be lower to several nW or even pW [4,7,8,10]. Unfortunately, the subthreshold MOSFET circuit commonly employs high values of resistors, which may occupy a large silicon area.…”